Why Choose Float Zone (FZ) Silicon?
- Ultra-high resistivity up to ~20,000 Ω·cm
- Very low oxygen and carbon levels
- Low defect density for high-performance devices
- Available in 100–200 mm diameters
- N- or P-type, ⟨100⟩ / ⟨111⟩ orientations
- SSP, DSP, and epi-ready finishes
Applications
Researchers and manufacturers choose FZ wafers for:
- High-voltage power devices & HV rectifiers
- RF and microwave circuits requiring low substrate loss
- Radiation and particle detectors
- Cryogenic and low-temperature physics
- Long-lifetime, low-defect device development
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Float Zone (FZ) Silicon Wafers
Float Zone (FZ) silicon is grown by moving a molten zone along a high-purity silicon rod without a crucible. Because no quartz crucible is used, FZ wafers exhibit very low oxygen and carbon content compared with Czochralski (CZ) material, along with low defect densities and the ability to achieve ultra-high resistivity. These properties make FZ the material of choice for high-voltage power devices, RF/microwave designs requiring low loss, radiation detection, and other performance-sensitive research and production.
Why Choose FZ vs. CZ?
- Ultra-high resistivity: Stable, very high Ω·cm ranges (often into the 104 Ω·cm regime) for RF/low-loss and detector work.
- Very low oxygen/carbon: No crucible contact → reduced O/C contamination and related defect mechanisms.
- Low defect density: Excellent carrier lifetime and electrical performance for demanding devices.
- Flexible specs: N- or P-type, ⟨100⟩/⟨111⟩ orientations, SSP/DSP, and epi-ready surfaces available.
Typical Specifications
| Diameters | 100 mm, 150 mm, 200 mm (inquire for others) |
| Resistivity | ~1–20,000 Ω·cm (ultra-high available) |
| Conductivity Type | N-type (Phosphorus), P-type (Boron); Nitrogen control available |
| Crystal Orientation | ⟨100⟩ or ⟨111⟩ |
| Thickness | ~275–675 µm typical (varies by lot and diameter) |
| Surface Finish | SSP, DSP, and epi-ready |
| Defects / Impurities | Low oxygen/carbon compared to CZ; low defect density |
Applications
FZ wafers are widely used in high-voltage rectifiers and thyristors, RF/microwave devices where substrate loss must be minimized, radiation and particle detectors (HEP, space), as well as cryogenic/low-temperature physics. The combination of low impurities, low defects, and high resistivity supports high lifetime and stable device behavior.
Inventory & Lead Times
We support both research quantities (small lots) and production volumes. Many popular diameters and resistivity bands are stocked or can be sourced quickly. Lead times depend on diameter, type/orientation, surface finish, and quantity. Tell us your target specs and delivery window and we’ll propose best-fit lots.
FAQs
Can I order epi-ready FZ wafers?
Yes. We offer epi-ready surface prep depending on the lot. Let us know your epi requirements and target device stack.
Do you support tight resistivity uniformity?
Yes. Share your resistivity target, uniformity window, and metrology needs; we’ll match to the best lots available.
What if I need unusual specs?
Tell us your diameter, type/orientation, resistivity, thickness, and surface finish; we’ll provide options and lead times.