Gallium Antimonide (GaSb) Wafers and Substrates 

Gallium Antimonide (GaSb) is a III-V compound semiconductor widely used in infrared (IR) optoelectronics and advanced device research. If you need GaSb for epitaxy, detectors, LEDs, lasers, or thermophotovoltaics, UniversityWafer can quote custom specs and also check availability from in-stock lots.

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Typical GaSb Specs We Quote

  • Diameters: 1"–4" (custom sizes available)
  • Orientations: (100) common; other orientations by request
  • Polish: SSP, DSP, epi-ready options
  • Doping: p-type / n-type depending on application
  • Quality: EPD / surface spec targets available on request

Related III-V Substrates and Resources

 

What Is Gallium Antimonide (GaSb)?

Gallium Antimonide (GaSb) is a III-V compound semiconductor formed by combining gallium (Ga) and antimony (Sb). It has a zinc blende crystal structure and a relatively narrow bandgap (~0.72 eV at room temperature), which makes it particularly sensitive to long-wavelength infrared (IR) light. These properties position GaSb as a critical material in optoelectronics and advanced semiconductor research.

Key Material Properties

GaSb exhibits excellent electron mobility and strong infrared absorption, which enables efficient performance in devices targeting the mid- to long-wave IR spectrum. Its lattice constant and thermal properties also make it compatible with other III-V compounds, such as InAs and AlSb, enabling high-quality heterostructures for lasers and detectors.

Applications of GaSb Wafers

Researchers and engineers use GaSb substrates in a range of applications:

  • Infrared detectors and sensors: GaSb’s bandgap allows detection in the 1–3 µm range and beyond, ideal for night-vision, gas sensing, and spectroscopy.
  • IR LEDs and lasers: Infrared light sources for communication, imaging, and remote sensing systems.
  • Heterostructure devices: Using GaSb with InAs and related materials enables quantum wells, superlattices, and advanced optoelectronics.
  • Thermophotovoltaics: Efficient energy conversion from heat to electricity for specialized power generation systems.

GaSb Growth & Processing

GaSb materials are typically grown using epitaxial techniques such as Molecular Beam Epitaxy (MBE) or Metal-Organic Chemical Vapor Deposition (MOCVD). These processes require high-quality, lattice-matched substrates with well-controlled surface quality and orientation. That’s why choosing the correct GaSb wafer—including polish, orientation, and doping—can dramatically impact device yield and performance.

Why Choose UniversityWafer for GaSb?

UniversityWafer specializes in supplying high-purity GaSb wafers tailored for research and prototyping. Customers can request custom specifications or check current inventory for standard sizes and orientations. Whether you’re developing the next generation of IR photonics or exploring novel III-V heterostructures, our team can help source the right substrates for your experiments.

In-Stock GaSb Wafers (Example Inventory)

Lot # Size Specs
GASB1 2" 2 Polished
GASB2 1.75" P-Type (100)
GASB2 2" x 4 mm Te/N-Type (100) blanks
GASB0677 50.8 mm x 450 µm P/Si (100), EPD < 1×10⁴
GASB5467 50.8 mm x 500 µm N/Te (100), EPD < 1×10³