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Need a Different Epi Stack?
Tell us your target wavelength and layer structure—MBE/MOCVD options available.
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LED Wafers: AlGaInAs ~650 nm on GaAs (4″)
Research-grade LED wafers suitable for device prototyping and process development. SSP GaAs substrates with AlGaInAs epitaxy targeting ~650 nm emission.
Featured Spec — SKU 147024
| Material | AlGaInAs epitaxy on GaAs substrate |
|---|---|
| Emission | ~650 nm (red) |
| Wafer Size | 4 inch |
| Substrate Finish | SSP (single-side polished) |
| Substrate Thickness | ≈350 µm (semi-flat) |
Stock changes frequently. If this SKU is unavailable, we’ll suggest the closest match.
How GaAs Substrates Enable LED Fabrication
Gallium arsenide (GaAs) provides a lattice-matched platform for epitaxial growth of III–V layers used in light emitting diodes. Using MBE or MOCVD, the active region and cladding layers are deposited with tight control of composition and thickness. After growth, metallization and mesa patterning define devices with efficient radiative recombination.
Common Options
- Wavelength targeting via alloy composition (e.g., AlGaInAs / AlGaAs)
- n/p-type configurations and contact schemes
- Substrate orientation and epi-ready polish
- Backside metallization and thinning on request
FAQ
Can you source custom wavelengths?
Yes. Provide your target wavelength and process constraints; we will match the epitaxial stack where feasible.
What is the lead time?
Stock items can ship quickly; custom epi may require additional lead time depending on complexity.
Looking for different sizes or epi stacks? Tell us your specs and we’ll advise availability.