Measure Thermal Oxide with a Calculator 

This thermal oxide thickness calculator helps estimate SiO₂ growth time on silicon wafers using common process inputs: starting and final oxide thickness, oxidation temperature, crystal orientation (100/111), and wet vs. dry oxidation. Use the visualizer to understand how process conditions affect oxide growth, then compare results with the SiO₂ physical constants table for quick lab reference during wafer processing, metrology planning, and run documentation.

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Physical Constants

Constant Name
Value
Density (g/cm3)
2.27
Dielectric Constant
3.9
DC Resistivity @25°C (Ω-cm)
1016
Energy gap (eV)
~9
Thermal conductivity (W/cm2°C)
0.014
Linear expansion coefficient (ppm/°C)
0.05
Refractive index
1.46
Melting Point (°C)
~1700
Molecular weight
60.08
Molecules/cm3
2.3*1022
Specific heat (J/g°C)
1.0
Film stress (at 25°C) dynes/cm2
2-4 x 109
IR absorption peak (mm)
9.3
Etch rate BHF (49%) nm/min
100

Oxide Growth Visualizer

Please provide oxidation data
Starting Thickness:
Ǻ
Final Thickness:
Ǻ
Temperature:
°C (700 to 1200)
Oxidation Time:
hh:mm:ss
Crystal Orientation:
Environment:

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