See below for our Partial Silicon Wafer Cassettes.
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Related Silicon Wafer Sizes, Types, and Specifications
- Silicon Wafers (main page)
- Silicon Wafer Diameters (1–12 inch)
- 200mm (8") Silicon Wafers
- 150mm (6") Silicon Wafers
- 300mm (12") Silicon Wafers
- Float Zone (FZ) Silicon Wafers
- Prime Grade Silicon Wafers
- [100] Silicon Wafer Orientation Guide
Partial Silicon (Si) Wafer Cassettes
See below for our partial cassettes of 150mm, 100mm, 76.2mm, 50.7mm, 25.3mm, CZ and FZ, SSP and DSP ready to ship!
| 12" Wafers, 8" Wafers, 6" Wafers, 5" Wafers, 4" Wafers, 3" Wafers, 2" Wafers, 1" Wafers, <1" Wafers | Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface); Material - CZ unless noted | |||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Item | Qty in Stock | Price ($/wafer) | Material | Orient. | Diam. | Thck (µm) | Surf. | Resistivity (Ωcm) | Comment | |||
| 8" Wafers | ||||||||||||
| 12123 | 12 | 50.40 | n-type Si:P | [100] | 8" | 890 ±15 | C/C | 5–35 {25–30} | SEMI notch, Empak cst | |||
| 6" Wafers | ||||||||||||
| K667 | 2 | 180.00 | p-type Si:B | [100] | 6" | 900 | C/C | FZ 2,700–3,300 | SEMI, 1Flat (57.5mm), Empak cst | |||
| A823 | 7 | 144.00 | p-type Si:B | [100] | 6" | 625 | P/P | FZ 600–900 | SEMI TEST (haze on edges) | |||
| B2106 | 2 | 1,256.40 | p-type Si:B | [100] | 6" | 772 ±1 | P/P | FZ 50-150 | JEIDA Prime, 1Flat, TTV<1µm, Bow<3.5µm, Warp<8µm, TIR<1µm, Empak cst | |||
| A2181 | 3 | 450.00 | p-type Si:B | [100] ±0.05° | 6" | 650 | P/P | FZ 1-30 | SEMI Prime, 1Flat (57.5mm), tight Surface & Flat Orientation tolerance, MCC Lifetime>1,000µs, Empak cst | |||
| B208 | 1 | 450.00 | n-type Si:P | [100] ±1° | 6" | 1,000 ±50 | P/P | FZ >9,500 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>6,000µs, Empak cst | |||
| E239 | 1 | 135.00 | n-type Si:P | [100] | 6" | 825 | C/C | FZ 7,000-8,000 {7,025-7,856} | SEMI, 1Flat, MCC Lifetime=7,562µs, in Unsealed Empak cst | |||
| F700 | 5 | 161.64 | n-type Si:P | [100-6° towards[111]] ±0.5° | 6" | 790 ±10 | C/C | FZ >3,500 | SEMI, 1Flat (57.5mm), Empak cst | |||
| 4982 | 14 | 122.40 | n-type Si:P | [100-6° towards[111]] ±0.5° | 6" | 675 | P/P | FZ >1,000 | SEMI Prime, Notch on <010> {not on <011>}, Front-side LaserMark, Empak cst | |||
| D982 | 1 | 180.00 | n-type Si:P | [100-6° towards[111]] ±0.5° | 6" | 675 | BROKEN | FZ >1,000 | SEMI notch BROKEN - one piece ~50% of wafer, other pieces ~20% of wafer, Empak cst | |||
| A1398 | 2 | 260.28 | n-type Si:P | [100] | 6" | 350 ±10 | P/P | FZ 50-70 | SEMI Prime, 1Flat (57.5mm), TTV<5µm, MCC Lifetime>10,000µs, Empak cst | |||
| B0669 | 3 | 195.48 | n-type Si:P | [100] | 6" | 500 ±10 | P/P | FZ 50-70 | SEMI Prime, 1Flat, MCC Lifetime>1,000µs, Empak cst | |||
| 5325 | 2 | 212.40 | n-type Si:P | [100] | 6" | 725 | P/P | FZ 50-70 {57-62} | SEMI Prime, 1Flat (57.5mm), MCC Lifetime=15,700µs, Empak cst | |||
| G883 | 6 | 176.40 | n-type Si:P | [100] | 6" | 650 ±5 | P/P | FZ 40-90 | SEMI Prime, 1Flat (57.5mm), TTV<3µm, Empak cst | |||
| F883 | 8 | 176.40 | n-type Si:P | [100] | 6" | 675 ±5 | P/P | FZ 40-90 | SEMI Prime, 1Flat (57.5mm), TTV<3µm, Empak cst | |||
| 12519 | 12 | 266.76 | n-type Si:P | [100] | 6" | 380 ±10 | P/P | FZ 20-70 | SEMI Prime, 1Flat, TTV<5µm, Empak cst | |||
| A2324 | 10 | 242.28 | n-type Si:P | [100] | 6" | 500 ±10 | P/P | FZ 20-70 | SEMI Prime, 1Flat, Front-Side LaserMark, MCC Lifetime>1,000µs, TTV<5µm, Empak cst | |||
| 11507 | 10 | 221.04 | n-type Si:P | [100] | 6" | 280 | P/P | FZ 3-4 {3.0-3.3} | Prime, 2Flats, PV FZ, MCC Lifetime=21,294µs, Empak cst | |||
| G228 | 3 | 90.00 | n-type Si:P | [111] ±0.5° | 6" | 300 ±15 | BROKEN | FZ >6,000 | BROKEN into a dozen large pieces ranging from 65% of wafer to 5% (plus small pieces) | |||
| N445 | 7 | 270.00 | n-type Si:P | [112-5.0° towards[11-1]] ±0.5° | 6" | 875 ±10 | E/E | FZ >3,000 | SEMI, 1Flat (47.5mm), TTV<4µm, Surface Chips, Empak cst | |||
| D929 | 3 | 180.00 | Intrinsic Si:- | [100] | 6" | 675 | P/E | FZ >20,000 | SEMI TEST (scratched), 1Flat (57.5mm), MCC Lifetime>1,000µs, Unsealed Empak cst | |||
| A0974 | 1 | 1,800.00 | Intrinsic Si:- | [100] | 6" | 3,250 ±100 | C/C | FZ >20,000 | SEMI, NO Flats, MCC Lifetime>1,000µs, No Edge Rounding (minor edge-chips), Individual cst | |||
| A0954 | 5 | 162.00 | p-type Si:B | [17,10,10] | 6" | 700 | P/P | >0.1 | SEMI Prime Notch, Empak cst | |||
| G458 | 5 | 180.00 | p-type Si:B | [110] ±0.5° | 6" | 390 ±10 | C/C | >10 | SEMI, 1Flat (57.5mm) at <111>±0.5°, Empak cst | |||
| A0334 | 4 | 135.00 | p-type Si:B | [110] ±0.25° | 6" | 625 ±15 | P/E | 10--20 | SEMI Prime, 2Flats {PF at <111>±0.5°, SF at <111> CW 109.5° from PF}, TTV<5µm, Empak cst | |||
| D283 | 1 | 180.00 | p-type Si:B | [110] ±0.5° | 6" | 675 | P/P | >10 | SEMI Prime, 2Flats {PF(57mm) at <111>±1°, SF(37mm) at <111> CW 70.5° from PF}, Empak cst | |||
| A1926 | 2 | 180.00 | p-type Si:B | [100] | 6" | 675 ±5 | P/P | 10--20 | SEMI Prime, 1Flat (57.5mm), TTV<1µm, with front side LaserMark, Empak cst | |||
| 11992 | 5 | 1,029.60 | p-type Si:B | [100] | 6" | 6,350 | P/E | 5--10 | Prime, NO Flats, Sealed in a multi-wafer box of 5 wafers | |||
| A1925 | 1 | 356.40 | p-type Si:B | [100-9.74°] ±0.1° | 6" | 275 | P/P | 1--35 | SEMI Prime, 1Flat (57.5mm), with Back-side LaserMark, Empak cst | |||
| C462 | 1 | 144.00 | p-type Si:B | [100] | 6" | 440 | P/E | 1--35 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| R392 | 1 | 180.00 | p-type Si:B | [100] | 6" | 620 | P/P | 1--35 | SEMI Prime, 1Flat (57.5mm), TTV<1µm, Empak cst | |||
| 8213 | 13 | 44.28 | p-type Si:B | [100] | 6" | 625 ±15 | P/E | 1-100 | SEMI Prime, 2Flats, Particle Count <20@0.2µm, Empak cst | |||
| A1428 | 2 | 135.00 | p-type Si:B | [100] | 6" | 675 | P/P | 1--5 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| A1501 | 3 | 122.40 | p-type Si:B | [100] | 6" | 675 | P/P | 1--35 | Prime, NO Flats, Empak cst | |||
| S5918 | 9 | 36.00 | p-type Si:B | [100] | 6" | 225 | P/P | 0.01-0.02 | SEMI TEST - Scratched, 1Flat (57.5mm), Empak cst | |||
| A1924 | 2 | 179.64 | p-type Si:B | [100] | 6" | 275 | P/P | 0.01-0.02 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| TS104 | 6 | 72.00 | p-type Si:B | [100] | 6" | 625 ±15 | P/EOx | 0.01-0.02 {0.0139-0.0144} | SEMI Prime, JEIDA Flat 47.5mm, Back-side LTO (0.3-0.4)µm thick, TTV<6µm, Empak csts of 2 + 4 wafers | |||
| G831 | 2 | 72.00 | p-type Si:B | [100-6° towards[111]] ±0.5° | 6" | 675 | P/P | 0.01-0.02 | SEMI TEST (scratched), 1Flat (57.5mm), in Unsealed Empak cst | |||
| A1222 | 1 | 213.84 | p-type Si:B | [100] | 6" | 1,300 | P/P | 0.001-0.005 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| E786 | 2 | 162.00 | p-type Si:B | [100] | 6" | 1,465 | C/C | 0.001-0.005 | SEMI, 1Flat (57.5mm), Empak cst | |||
| J668 | 14 | 31.68 | p-type Si:B | [111] ±0.5° | 6" | 675 | E/E | 0.010-0.025 | SEMI, 1Flat (57.5mm), Empak cst | |||
| 11856 | 12 | 622.80 | n-type Si:P | [100] | 6" | 3,093 ±50 | P/P | 25-30 | SEMI Prime, 1Flat (57.5mm), TTV<5µm, Groups of 2 + 10 wafers | |||
| A0640 | 1 | 230.40 | n-type Si:P | [100] | 6" | 1,300 | P/P | 15-35 | SEMI notch Prime, Empak cst | |||
| A2104 | 3 | 230.40 | n-type Si:P | [100] | 6" | 675 | P/P | 10--35 | SEMI Prime Notch, Laser Mark on front side, Empak cst | |||
| A0243 | 4 | 396.00 | n-type Si:P | [100] | 6" | 725 | P/P | 5--35 | SEMI Prime, 1 JEIDA Flat(47.5mm), TTV<0.6µm, Bow<8µm, Warp<18µm, with data on each wafer, identified by LaserMark, in Empak cst | |||
| A2108 | 1 | 360.00 | n-type Si:P | [100] | 6" | 665 ±1 | P/P | 1-100 {5-35} | JEIDA Prime, 1Flat, TTV<1µm, TIR<1µm, Bow<4µm, Warp<8µm, Empak cst | |||
| C716 | 7 | 216.00 | n-type Si:P | [100-28° towards[110]] ±1° | 6" | 700 | P/P | 1-100 | SEMI Prime, Notch, TTV<2µm, Empak cst | |||
| H246 | 6 | 162.00 | n-type Si:P | [100] | 6" | 710 ±15 | P/P | 1-100 | SEMI Prime, Notch, TTV<2µm, Empak cst | |||
| F089 | 4 | 270.00 | n-type Si:P | [100] | 6" | 1,910 ±10 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), TTV<5µm, sealed in stacked trays of 1 & 3 wafer | |||
| H631 | 7 | 270.00 | n-type Si:P | [100] | 6" | 1,910 ±10 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), TTV<3µm, in single wafer cst | |||
| 12362 | 2 | 176.40 | n-type Si:P | [100] | 6" | 2,950 ±50 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), in Individual csts, Sold in pack of 2 wafers | |||
| A2454 | 2 | 288.00 | n-type Si:P | [100] | 6" | 2,950 | P/P | 1--10 | SEMI Prime, 1Flat (57.5mm), In Group of 2 wafers | |||
| A0405 | 1 | 9.00 | n-type Si:P | [100] ±3° | 156x156 | 150 ±10 | C/C | 0.3-2.1 | Pseudo-Square (210mm diagonal) PV wafers as cut by wire saw, MCC Lifetime>500µs, packed in coin-roll | |||
| X9112 | 10 | 18.00 | n-type Si:As | [100] | 6" | E/E | 0.001-0.005 | RTP, 1Flat, In Unsealed Empak cst | ||||
| C316 | 10 | 72.00 | n-type Si:P | [911] ±0.5° | 6" | 1,500 | G/G | 0.1-35.0 | SEMI Prime, 1Flat, Empak cst | |||
| P406 | 5 | 360.00 | n-type Si:P | [411] ±1° | 6" | 1,000 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), TTV<5µm, Empak cst | |||
| Q406 | 1 | 180.00 | n-type Si:P | [411] ±1° | 6" | 1,075 ±50 | P/P | 1-100 | SEMI TEST (Dirty, scratched), 1Flat (57.5mm), Empak cst | |||
| B0787 | 15 | 38.88 | n-type Si:P | [111-3.5°] ±0.5° | 6" | 267 ±10 | E/E | 0.212-0.237 | SEMI, Bright etch (both sides), 1Flat 42.5±2.5mm, at 15±1° CW from <110>, Empak cst | |||
| 10926 | 10 | 61.20 | n-type Si:Sb | [111] ±1.0° | 6" | 315 ±15 | P/E | 0.005-0.020 {0.010-0.020} | Prime, 1Flat {42.5mm long, 15±1° CW from <110>}, Back-side Acid etched, Empak cst | |||
| TS109 | 3 | 43.20 | n-type Si:As | [111-4°] ±0.5° | 6" | 508 ±15 | P/E | 0.0023-0.0026 | SEMI Prime, 1Flat (57.5mm), TTV<8µm, Empak cst (16×25+21+17+16+3×12 wafers) | |||
| TS157 | 6 | 90.00 | n-type Si:As | [111-4°] ±0.5° | 6" | 508 ±15 | P/E | 0.0023-0.0026 | SEMI Prime, 1Flat (57.5mm), TTV<8µm, in Empak cassettes of 2 & 4 wafers | |||
| A1101 | 4 | 576.00 | n-type Si:P | [522] ±0.5° | 6" | 650 | P/P | 10--35 | Prime, 2Flats, Empak cst | |||
| A1162 | 3 | 324.00 | p-type Si:B | [100] | 6" | 600 | P/P | FZ 2,652-2,743 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| A0626 | 3 | 180.00 | p-type Si:B | [100] ±0.1° | 6" | 775 | P/P | FZ >2,500 | SEMI Prime, 1Flat (57.5mm), TTV<1µm, Empak cst | |||
| A1005 | 15 | 450.00 | p-type Si:B | [100-10° towards[110]] ±0.5° | 6" | 300 | P/P | FZ 800-1,000 | SEMI Prime, 1Flat, MCC Lifetime>1,000µs, Empak cst | |||
| B1326 | 1 | 684.00 | p-type Si:B | [100] | 6" | 650 | P/P | FZ 100-200 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>5,000µs, Empak cst | |||
| A1107 | 2 | 453.60 | p-type Si:B | [100] | 6" | 675 | P/P | FZ 100-200 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>5,000µs, Empak cst | |||
| S5885 | 10 | 125.64 | p-type Si:B | [100] ±1° | 6" | 700 | P/P | FZ 80-120 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| H503 | 10 | 140.40 | p-type Si:B | [100] | 6" | 725 | P/P | FZ >50 | SEMI Prime, 1Flat, TTV<5µm, MCC Lifetime>1,000µs, Empak cst | |||
| A2106 | 10 | 1,616.40 | p-type Si:B | [100] | 6" | 762 ±12 | P/P | FZ >50 | JEIDA Prime, 1Flat, TTV<1µm, Bow<4.5µm, Warp<10µm, TIR<1µm, Empak cst | |||
| B1343 | 2 | 324.00 | p-type Si:B | [100] | 6" | 650 | P/P | FZ 8-13 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| D287 | 5 | 176.40 | p-type Si:B | [100] ±0.05° | 6" | 650 | P/P | FZ 1-30 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000µs, Empak cst | |||
| E287 | 15 | 176.40 | p-type Si:B | [100] ±0.1° | 6" | 650 | P/P | FZ 1-30 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000µs, Empak cst | |||
| F231 | 20 | 158.40 | p-type Si:B | [100] | 6" | 650 | P/P | FZ 1-30 {1.379-1.382} | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,705µs, Empak cst | |||
| O573 | 10 | 450.00 | p-type Si:B | [100] ±0.05° | 6" | 650 | P/P | FZ 1-30 | SEMI Prime, 1Flat (57.5mm), TTV<1µm, Tight Surface & Flat Orientation tolerance, MCC Lifetime>1,000µs, Back-side LaserMark, Empak cst | |||
| A0206 | 12 | 140.40 | p-type Si:B | [100] | 6" | 675 | P/P | FZ 1-30 | SEMI Prime, 1Flat (57.5mm), with LaserMark, Empak cst | |||
| A0600 | 10 | 768.96 | p-type Si:B | [100] | 6" | 675 ±5 | P/P | FZ 1-30 | SEMI Prime, 1Flat (57.5mm), TTV<1µm, Empak cst | |||
| C208 | 1 | 900.00 | n-type Si:P | [100] ±1° | 6" | 950 ±50 | P/P | FZ >9,500 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>6,934µs, Empak cst | |||
| B2135 | 3 | 576.00 | n-type Si:P | [100] | 6" | 500 ±5 | P/P | FZ 60-70 | SEMI Prime, 1Flat, MCC Lifetime>1,000µs, with Back-Side LaserMark, TTV<0.5µm, Empak cst | |||
| J390 | 5 | 234.00 | n-type Si:P | [100] | 6" | 500 ±10 | P/P | FZ 50-70 {57-62} | SEMI Prime, 1Flat (57.5mm), Lifetime=15,799µs, Empak cst | |||
| H883 | 5 | 315.36 | n-type Si:P | [100] | 6" | 625 ±5 | P/P | FZ 40-90 | SEMI Prime, 1Flat (57.5mm), TTV<5µm, Empak cst | |||
| A1399 | 5 | 360.00 | n-type Si:P | [100] | 6" | 1,500 ±15 | P/P | FZ 40-90 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>2,400µs, TTV<5µm, Empak cst | |||
| B2220 | 3 | 273.96 | n-type Si:P | [100] | 6" | 750 ±10 | P/P | FZ 30-70 | SEMI Prime, 1Flat, MCC Lifetime>1,000µs, With Front-Side LaserMark, Empak cst | |||
| A0921 | 10 | 206.28 | n-type Si:P | [100] | 6" | 500 ±10 | P/P | FZ 20-70 | SEMI Prime, 1Flat, Empak cst | |||
| A2352 | 2 | 206.28 | n-type Si:P | [100] | 6" | 500 ±10 | P/P | FZ 20-70 | SEMI Prime, 1Flat, with Front-Side LaserMark, MCC Lifetime>1,000µs, Empak cst | |||
| B2324 | 10 | 242.28 | n-type Si:P | [100] | 6" | 500 ±10 | P/P | FZ 20-70 | SEMI Prime, 1Flat, with Front-Side LaserMark, MCC Lifetime>1,000µs, Empak cst | |||
| E064 | 10 | 216.00 | n-type Si:P | [111] ±0.5° | 6" | 425 | P/P | FZ >3,000 | SEMI Prime, 2Flats, Empak cst | |||
| K343 | 15 | 338.40 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 6" | 800 ±10 | P/P | FZ >3,000 | SEMI Prime, 1 JEIDA Flat (47.5mm), TTV<4µm, MCC Lifetime>1,000µs, Empak cst | |||
| D817 | 5 | 504.00 | Intrinsic Si:- | [100] | 6" | 650 | P/P | FZ >65,000 | SEMI Prime, Notch, Empak cst | |||
| A752 | 10 | 395.64 | Intrinsic Si:- | [100] ±0.1° | 6" | 720 | P/P | FZ >65,000 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| A1962 | 3 | 1,130.40 | Intrinsic Si:- | [100-9.7°] ±0.5° | 6" | 500 ±5 | P/P | FZ >20,000 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,500µs, TTV<1µm, Bow<5µm, Empak cst | |||
| A2320 | 5 | 684.00 | Intrinsic Si:- | [100] | 6" | 500 | P/P | FZ >20,000 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000µs, TTV<1µm, Empak cst | |||
| A0273 | 5 | 392.40 | Intrinsic Si:- | [100] | 6" | 650 | P/P | FZ >20,000 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000µs, Empak cst | |||
| A2180 | 1 | 630.00 | Intrinsic Si:- | [100] | 6" | 650 | P/P | FZ >20,000 | SEMI Prime, 1Flat (57.5mm), TTV<1µm, MCC Lifetime>1,000µs, Empak cst | |||
| B0974 | 10 | 369.00 | Intrinsic Si:- | [100] | 6" | 650 | C/C | FZ >20,000 | Prime, NO Flats, MCC Lifetime>1,000µs, No Edge Rounding, Minor edge-chips, in Individual cst, Sold in packs of 5 wafers | |||
| B0257 | 5 | 324.00 | Intrinsic Si:- | [100] | 6" | 780 | P/P | FZ >20,000 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000µs, Empak cst | |||
| B1532 | 3 | 468.00 | Intrinsic Si:- | [100] | 6" | 1,000 ±50 | P/P | FZ >20,000 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000µs, Empak cst | |||
| K299 | 10 | 266.40 | Intrinsic Si:- | [100] | 6" | 675 | P/P | FZ >10,000 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| A2415 | 1 | 450.00 | Intrinsic Si:- | [100] | 6" | 725 | P/P | FZ >10,000 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| D233 | 1 | 630.00 | Intrinsic Si:- | [111] ±0.5° | 6" | 875 | P/P | FZ >10,000 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| B0954 | 10 | 549.00 | p-type Si:B | [17,10,10] | 6" | 700 | P/P | 7-Mar | SEMI Prime Notch, Empak cst | |||
| G045 | 5 | 176.40 | p-type Si:B | [110] ±0.5° | 6" | 625 | P/E | 10--24 | SEMI Prime, 1Flat at <111>, Empak cst | |||
| C980 | 10 | 324.00 | p-type Si:B | [100] | 6" | 285 | P/P | 10--30 | SEMI Prime, Notch, Empak cst | |||
| B1501 | 10 | 104.40 | p-type Si:B | [100] | 6" | 650 | P/P | 5--20 | NO Flats, Empak cst | |||
| B1343 | 2 | 324.00 | p-type Si:B | [100] | 6" | 650 | P/P | FZ 8-13 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| D287 | 5 | 176.40 | p-type Si:B | [100] ±0.05° | 6" | 650 | P/P | FZ 1-30 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000µs, Empak cst | |||
| E287 | 15 | 176.40 | p-type Si:B | [100] ±0.1° | 6" | 650 | P/P | FZ 1-30 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000µs, Empak cst | |||
| F231 | 20 | 158.40 | p-type Si:B | [100] | 6" | 650 | P/P | FZ 1-30 {1.379-1.382} | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,705µs, Empak cst | |||
| O573 | 10 | 450.00 | p-type Si:B | [100] ±0.05° | 6" | 650 | P/P | FZ 1-30 | SEMI Prime, 1Flat (57.5mm), TTV<1µm, Tight Surface & Flat Orientation tolerance, MCC Lifetime>1,000µs, Back-side LaserMark, Empak cst | |||
| A0206 | 12 | 140.40 | p-type Si:B | [100] | 6" | 675 | P/P | FZ 1-30 | SEMI Prime, 1Flat (57.5mm), with LaserMark, Empak cst | |||
| A0600 | 10 | 768.96 | p-type Si:B | [100] | 6" | 675 ±5 | P/P | FZ 1-30 | SEMI Prime, 1Flat (57.5mm), TTV<1µm, Empak cst | |||
| C208 | 1 | 900.00 | n-type Si:P | [100] ±1° | 6" | 950 ±50 | P/P | FZ >9,500 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>6,934µs, Empak cst | |||
| B2135 | 3 | 576.00 | n-type Si:P | [100] | 6" | 500 ±5 | P/P | FZ 60-70 | SEMI Prime, 1Flat, MCC Lifetime>1,000µs, with Back-Side LaserMark, TTV<0.5µm, Empak cst | |||
| J390 | 5 | 234.00 | n-type Si:P | [100] | 6" | 500 ±10 | P/P | FZ 50-70 {57-62} | SEMI Prime, 1Flat (57.5mm), Lifetime=15,799µs, Empak cst | |||
| H883 | 5 | 315.36 | n-type Si:P | [100] | 6" | 625 ±5 | P/P | FZ 40-90 | SEMI Prime, 1Flat (57.5mm), TTV<5µm, Empak cst | |||
| A1399 | 5 | 360.00 | n-type Si:P | [100] | 6" | 1,500 ±15 | P/P | FZ 40-90 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>2,400µs, TTV<5µm, Empak cst | |||
| B2220 | 3 | 273.96 | n-type Si:P | [100] | 6" | 750 ±10 | P/P | FZ 30-70 | SEMI Prime, 1Flat, MCC Lifetime>1,000µs, With Front-Side LaserMark, Empak cst | |||
| A0921 | 10 | 206.28 | n-type Si:P | [100] | 6" | 500 ±10 | P/P | FZ 20-70 | SEMI Prime, 1Flat, Empak cst | |||
| A2352 | 2 | 206.28 | n-type Si:P | [100] | 6" | 500 ±10 | P/P | FZ 20-70 | SEMI Prime, 1Flat, with Front-Side LaserMark, MCC Lifetime>1,000µs, Empak cst | |||
| B2324 | 10 | 242.28 | n-type Si:P | [100] | 6" | 500 ±10 | P/P | FZ 20-70 | SEMI Prime, 1Flat, with Front-Side LaserMark, MCC Lifetime>1,000µs, Empak cst | |||
| E064 | 10 | 216.00 | n-type Si:P | [111] ±0.5° | 6" | 425 | P/P | FZ >3,000 | SEMI Prime, 2Flats, Empak cst | |||
| K343 | 15 | 338.40 | n-type Si:P | [112-5° towards[11-1]] ±0.5° | 6" | 800 ±10 | P/P | FZ >3,000 | SEMI Prime, 1 JEIDA Flat (47.5mm), TTV<4µm, MCC Lifetime>1,000µs, Empak cst | |||
| D817 | 5 | 504.00 | Intrinsic Si:- | [100] | 6" | 650 | P/P | FZ >65,000 | SEMI Prime, Notch, Empak cst | |||
| A752 | 10 | 395.64 | Intrinsic Si:- | [100] ±0.1° | 6" | 720 | P/P | FZ >65,000 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| A1962 | 3 | 1,130.40 | Intrinsic Si:- | [100-9.7°] ±0.5° | 6" | 500 ±5 | P/P | FZ >20,000 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,500µs, TTV<1µm, Bow<5µm, Empak cst | |||
| A2320 | 5 | 684.00 | Intrinsic Si:- | [100] | 6" | 500 | P/P | FZ >20,000 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000µs, TTV<1µm, Empak cst | |||
| A0273 | 5 | 392.40 | Intrinsic Si:- | [100] | 6" | 650 | P/P | FZ >20,000 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000µs, Empak cst | |||
| A2180 | 1 | 630.00 | Intrinsic Si:- | [100] | 6" | 650 | P/P | FZ >20,000 | SEMI Prime, 1Flat (57.5mm), TTV<1µm, MCC Lifetime>1,000µs, Empak cst | |||
| B0974 | 10 | 369.00 | Intrinsic Si:- | [100] | 6" | 650 | C/C | FZ >20,000 | Prime, NO Flats, MCC Lifetime>1,000µs, No Edge Rounding, Minor edge-chips, in Individual cst, Sold in packs of 5 wafers | |||
| B0257 | 5 | 324.00 | Intrinsic Si:- | [100] | 6" | 780 | P/P | FZ >20,000 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000µs, Empak cst | |||
| B1532 | 3 | 468.00 | Intrinsic Si:- | [100] | 6" | 1,000 ±50 | P/P | FZ >20,000 | SEMI Prime, 1Flat (57.5mm), MCC Lifetime>1,000µs, Empak cst | |||
| K299 | 10 | 266.40 | Intrinsic Si:- | [100] | 6" | 675 | P/P | FZ >10,000 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| A2415 | 1 | 450.00 | Intrinsic Si:- | [100] | 6" | 725 | P/P | FZ >10,000 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| D233 | 1 | 630.00 | Intrinsic Si:- | [111] ±0.5° | 6" | 875 | P/P | FZ >10,000 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| B0954 | 10 | 549.00 | p-type Si:B | [17,10,10] | 6" | 700 | P/P | 7-Mar | SEMI Prime Notch, Empak cst | |||
| G045 | 5 | 176.40 | p-type Si:B | [110] ±0.5° | 6" | 625 | P/E | 10--24 | SEMI Prime, 1Flat at <111>, Empak cst | |||
| C980 | 10 | 324.00 | p-type Si:B | [100] | 6" | 285 | P/P | 10--30 | SEMI Prime, Notch, Empak cst | |||
| B1501 | 10 | 104.40 | p-type Si:B | [100] | 6" | 650 | P/P | 5--20 | NO Flats, Empak cst | |||
| M838 | 25 | 356.40 | p-type Si:B | [100-9.74°] ±0.1° | 6" | 275 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), with LaserMark, Empak cst | |||
| L586 | 5 | 159.84 | p-type Si:B | [100] | 6" | 400 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), TTV<10µm, Bow/Warp<20µm, Empak cst | |||
| E462 | 3 | 159.84 | p-type Si:B | [100] | 6" | 440 | P/E | 1--35 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| B1122 | 2 | 194.40 | p-type Si:B | [100] | 6" | 480 | P/P | 1--35 | SEMI, 1Flat (57.5mm), Empak cst | |||
| A1312 | 10 | 108.00 | p-type Si:B | [100] | 6" | 650 | P/P | 1--5 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| B1605 | 10 | 284.40 | p-type Si:B | [100] | 6" | 1,500 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), TTV<1µm, Individual cst, Groups of 5 wafers | |||
| A1307 | 1 | 302.40 | p-type Si:B | [100] | 6" | 2,150 ±50 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), TTV<1µm, Individual cst, In Groups of 2 wafers | |||
| A0444 | 3 | 356.40 | p-type Si:B | [100] | 6" | 2,200 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), TTV<1µm, Individual cst | |||
| B0444 | 4 | 230.40 | p-type Si:B | [100] | 6" | 2,200 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), TTV<10µm, Individual cst, Group of 4 wafers | |||
| A1761 | 5 | 216.00 | p-type Si:B | [100] | 6" | 2,975 ±50 | P/E | 1-100 | SEMI Prime, 1Flat (57.5mm), Individual cst, Groups of 5 wafers | |||
| 11721 | 5 | 216.00 | p-type Si:B | [100] | 6" | 3,000 ±50 | P/E | 1-100 | SEMI Prime, 1Flat (57.5mm), Individual cst, Groups of 5 wafers | |||
| I053 | 5 | 107.64 | p-type Si:B | [100] | 6" | 525 | P/P | 0.013-0.020 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| S5794 | 5 | 179.64 | p-type Si:B | [100] | 6" | 275 | P/P | 0.01-0.02 | SEMI Prime, 1Flat (57.5mm), TTV<5µm, Empak cst | |||
| I516 | 3 | 179.64 | p-type Si:B | [100] | 6" | 350 ±50 | P/P | 0.001-0.030 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| A1513 | 5 | 141.84 | p-type Si:B | [100] | 6" | 650 | P/P | 0.001-0.005 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| B1222 | 3 | 213.84 | p-type Si:B | [100] | 6" | 1,300 | P/P | 0.001-0.005 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| D561 | 5 | 176.40 | p-type Si:B | [100] ±0.1° | 6" | 400 ±10 | P/P | <0.005 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| A1199 | 1 | 1,674.00 | p-type Si:B | [311] ±1° | 6" | 1,500 ±50 | P/P | 1-100 | Prime, 2Flats, Empak cst | |||
| A0953 | 5 | 396.00 | p-type Si:B | [755] | 6" | 675 | P/P | >0.1 | SEMI notch Prime, Empak cst | |||
| B0420 | 4 | 176.40 | n-type Si:Sb | [110] ±0.5° | 6" | 625 | P/P | 0.01-0.02 | SEMI Prime, JEIDA Flat (47.5mm) at <001>, Empak cst | |||
| N740 | 5 | 122.40 | n-type Si:Sb | [110] ±0.5° | 6" | 625 | P/P | 0.01-0.02 | SEMI Prime, JEIDA Flat (47.5mm) at <001>, Empak cst | |||
| S5927 | 5 | 108.00 | n-type Si:P | [100] | 6" | 625 | P/E | 30-60 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| A1856 | 5 | 622.80 | n-type Si:P | [100] | 6" | 3,050 ±50 | P/P | 25-30 | SEMI Prime, 1Flat (57.5mm), TTV<5µm, in Individual csts, Packs of 5 wafers | |||
| B0640 | 1 | 324.00 | n-type Si:P | [100] | 6" | 1,300 | P/P | 15-35 | SEMI notch Prime, Empak cst | |||
| B2104 | 3 | 230.40 | n-type Si:P | [100] | 6" | 675 | P/P | 10--35 | SEMI Prime Notch, Laser Mark on front side, Empak cst | |||
| F270 | 5 | 216.00 | n-type Si:P | [100] | 6" | 675 | P/P | 10--35 | SEMI notch Prime, TTV<2µm, Empak cst | |||
| G270 | 5 | 180.00 | n-type Si:P | [100] | 6" | 675 | P/P | 10--35 | SEMI Notch Prime, TTV<5µm, LaserMark, Empak cst | |||
| K286 | 3 | 378.00 | n-type Si:P | [100] | 6" | 2,600 ±50 | P/P | 10--35 | NO Flats, Individual cst in group of 3 wafers | |||
| A1818 | 2 | 622.80 | n-type Si:P | [100] | 6" | 3,093 ±50 | P/P | 10--35 | SEMI, 1Flat (57.5mm), Individual cst, Sold in groups of 1 wafer | |||
| C1272 | 1 | 504.00 | n-type Si:P | [100-9.74° towards[111]] ±0.1° | 6" | 500 | P/P | 5--35 | SEMI Prime, 1Flat (57.5mm), Front-Side LaserMark, Empak cst | |||
| F509 | 8 | 90.00 | n-type Si:P | [100] | 6" | 650 | P/P | 5--35 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| A0825 | 10 | 177.84 | n-type Si:P | [100] | 6" | 700 | P/P | 5--35 | SEMI Prime, 1Flat(57.5mm), TTV<5µm, TIR<1µm, Bow<10µm, Warp<20µm, Empak cst | |||
| E324 | 5 | 161.64 | n-type Si:P | [100] | 6" | 725 | P/P | 5--35 | SEMI Prime, 1 SEMI Flat(57.5mm), TTV<5µm, TIR<1µm, Bow<10µm, Warp<20µm, Wafers await final polish, Empak cst | |||
| J324 | 5 | 125.64 | n-type Si:P | [100] | 6" | 725 | P/P | 5--35 | SEMI Prime, 1 JEIDA Flat(47.5mm), TTV<5µm, TIR<1µm, Bow<10µm, Warp<20µm, with Laser Mark, Empak cst | |||
| S5861 | 15 | 72.00 | n-type Si:P | [100] | 6" | 675 ±15 | P/E | 3--10 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| S5781 | 10 | 72.00 | n-type Si:P | [100] | 6" | 675 | P/E | 2.7-4.0 | SEMI Prime, 1Flat, Empak cst | |||
| S5884 | 5 | 504.00 | n-type Si:P | [100] | 6" | 235 ±35 | P/P | 1--5 | SEMI Prime, 1Flat (57.5mm), Empak cst | |||
| E556 | 8 | 108.00 | n-type Si:P | [100] | 6" | 475 | P/P | 1-100 | SEMI, 1Flat (57.5mm), TTV<5µm, Bow/Warp<15µm, with LaserMark, Empak cst | |||
| G041 | 5 | 179.64 | n-type Si:P | [100] | 6" | 650 | P/P | 1-100 | JEIDA Prime, TTV<1µm, LaserMark, Empak cst | |||
| A0942 | 10 | 324.00 | n-type Si:P | [100] | 6" | 675 | P/P | 1-100 | SEMI notch Prime, TTV<5µm, with Back-Side Lasermark, Empak cst | |||
| C946 | 5 | 144.00 | n-type Si:P | [100] | 6" | 675 | P/P | 1-100 | SEMI notch Prime, Lasermark. Extra low TTV for extra charge, Empak cst | |||
| D716 | 6 | 216.00 | n-type Si:P | [100-28° towards[110]] ±1° | 6" | 675 | P/P | 1-100 | SEMI Notch Prime, TTV<5µm, Empak cst | |||
| D946 | 10 | 147.60 | n-type Si:P | [100] | 6" | 700 | P/P | 1-100 | SEMI notch Prime, Empak cst | |||
| J334 | 5 | 324.00 | n-type Si:P | [100-25° towards[110]] ±1° | 6" | 700 | P/P | 1-100 | SEMI notch Prime, Empak cst | |||
| G089 | 5 | 504.00 | n-type Si:P | [100] | 6" | 1,875 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), TTV<3µm, in stacked trays of 5 wafers | |||
| A2362 | 1 | 176.40 | n-type Si:P | [100] | 6" | 2,950 ±50 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), Individual cst | |||
| 10244 | 1 | 242.64 | n-type Si:P | [100] | 6" | 3,000 | P/P | 1--10 | SEMI Prime, 1Flat (57.5mm), in Individual csts, Sold Individually | |||
| A711 | 5 | 242.64 | n-type Si:P | [100] | 6" | 3,000 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm), Individual cst, TTV<5µm, Sold in packs of 5 wafers | |||
| C0554 | 5 | 702.00 | n-type Si:P | [311] ±1° | 6" | 625 | P/P | 10--35 | Test, 2Flats, Empak cst | |||
| A0552 | 1 | 702.00 | n-type Si:P | [211] ±1° | 6" | 625 | P/P | 10--35 | Prime, 2Flats, Empak cst | |||
| A1169 | 5 | 504.00 | n-type Si:P | [522] | 6" | 625 | P/P | 10--35 | Prime, 2Flats, Empak cst | |||
| A167 | 5 | 576.00 | n-type Si:P | [522] ±1° | 6" | 650 | P/P | 10--35 | SEMI Prime, 2Flats, Empak cst | |||
| B0457 | 3 | 900.00 | n-type Si:P | [522] ±1° | 6" | 650 | P/P | 10--35 | SEMI Prime, 2Flats, Empak cst | |||
| 5" Wafers | Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface); Material - CZ unless noted | |||||||||||
| 5744 | 12 | 50.40 | p-type Si:B | [100] | 5" | 920 ±10 | E/E | FZ >1,000 | SEMI, 2 SEMI Flats, Empak cst | |||
| B1005 | 2 | 144.00 | p-type Si:B | [611] ±0.5° | 5" | 300 ±5 | P/P | FZ 800-1,000 | SEMI Prime, 1Flat at <001>, MCC Lifetime>1,000µs, Empak cst | |||
| D863 | 7 | 54.00 | n-type Si:P | [100] | 5" | 400 | P/E | FZ 7,000-14,300 | SEMI Prime, 1Flat, Bow/Warp<20µm, Empak cst | |||
| C863 | 3 | 90.00 | n-type Si:P | [100] | 5" | 350 | P/E | FZ 5,000-10,000 | SEMI Prime, 1Flat, Bow/Warp<20µm, Empak cst | |||
| 11023 | 10 | 90.00 | n-type Si:P | [111] ±0.5° | 5" | 275 | P/P | FZ 7,000-20,000 | SEMI Prime, 2Flats, Empak cst | |||
| F083 | 1 | 90.00 | n-type Si:P | [111] ±0.1° | 5" | 200 ±15 | BROKEN | FZ >3,000 | BROKEN L/L wafers, in 2 pieces | |||
| S5598 | 2 | 90.00 | p-type Si:B | [100] | 5" | 228 | P/P | 1--10 | SEMI Prime, 1Flat, TTV<5µm, Empak cst | |||
| 9228 | 14 | 36.00 | p-type Si:B | [100] ±1.0° | 5" | 525 | P/EOx | 0.002-0.004 {0.0031-0.0035} | SEMI Prime, 1Flat, Free of Striations, TTV<5µm, Back-Side LTO seal 0.50±0.05µm thick, in Empak cassettes of 7 wafers | |||
| X2130 | 18 | 9.00 | p-type Si:B | [100] | 5" | 525 | P/EOx | SEMI TEST, 2Flats, In Unsealed Empak cst | ||||
| X7135 | 11 | 14.40 | p-type Si:B | [100] | 5" | 710 ±50 | E/E | ? | SEMI TEST {Resistivity unknown}, 1Flat, In Unsealed Empak cst | |||
| TS074 | 12 | 22.68 | p-type Si:B | [111-4°] ±0.5° | 5" | 538 ±13 | P/E | 3-6 {3.64-5.17} | SEMI Prime, 1Flat, in Empak cst of 12+14 wafers | |||
| E683 | 5 | 32.40 | p-type Si:B | [111-3.5°] ±1.0° | 5" | 375 ±15 | P/EOx | 0.012-0.018 {0.0151-0.0153} | SEMI Prime, 1Flat 42.5mm long at 15° CW from (110), Empak cst | |||
| TS003 | 5 | 33.84 | n-type Si:As | [100-1°] ±0.25° | 5" | 375 | P/EOx | 0.0010-0.0035 {0.0029-0.0032} | SEMI, 1Flat, HBSD+LTO 800nm, Empak cst | |||
| X9700 | 14 | 14.40 | n-type Si:Sb | [100] | 5" | 550 | E/E | <1 | RTP, SEMI Primary Flat, Secondary @ 135°, in Unsealed Empak cst | |||
| X9701 | 10 | 14.40 | n-type Si:Sb | [100] | 5" | 550 | E/E | <1 | RTP, 1 Flat, In Opened Empak cst | |||
| X7167 | 8 | 9.00 | n-type Si:Sb | [100] | 5" | 625 | E/E | SEMI 2Flats (2nd @135°), 125.63mm diameter, in Unsealed Empak csts | ||||
| X6989 | 5 | 14.40 | n-type Si:As | [100] | 5" | 650 | E/E | <1 | RTP, Primary Flat, Secondary @ 180°, In Unsealed Empak cst | |||
| TS060 | 13 | 33.84 | n-type Si:P | [111-4°] ±0.5° | 5" | 430 ±100 | P/EOx | 0.001-0.002 {0.0014-0.0017} | SEMI Prime, 1Flat, Back-side LTO 850nm thick, Wafer thickness measured 500±5µm, Free of Striations, Empak cst | |||
| 7188 | 5 | 10.80 | n-type Si:As | [111] | 5" | 525 | E/E | 0.001-0.005 | SEMI TEST - No CofC, 1Flat, Back-side Oxide seal, in Unsealed Empak cassettes | |||
| X9114 | 6 | 32.40 | n-type Si:? | [100] | 5" | ? | P/EOx | ? | SEMI TEST, 2Flats (SF @ 180°), Back-side LTO seal, In Unsealed Empak cst | |||
| X1991 | 4 | 14.40 | n-type Si:? | [100] | 5" | ? | P/E | ? | SEMI TEST, 2Flats (2nd @ 180°), sealed Empak cst | |||
| X7289 | 5 | 5.40 | n-type Si | [111-4°] | 5" | 375 | P/E | SEMI TEST, 2Flats (SF 45° from PF), in Unsealed Empak cst | ||||
| E804 | 17 | 151.20 | p-type Si:B | [100] | 5" | 762 | P/P | FZ 2,000-3,000 | SEMI Prime, 1Flat, TTV<2µm, Bow<10µm, Warp<20µm, Empak cst | |||
| H744 | 15 | 140.40 | p-type Si:B | [100] | 5" | 750 | P/P | FZ >1,000 | SEMI Prime, 2Flats, Empak cst | |||
| C2378 | 4 | 90.00 | p-type Si:B | [100] | 5" | 800 | P/P | FZ >1,000 | SEMI Prime, 2Flats, Empak cst | |||
| D1005 | 5 | 623.52 | p-type Si:B | [100-10° towards[110]] ±0.5° | 5" | 300 ±5 | P/P | FZ 800-1,000 | SEMI Prime, 1Flat, MCC Lifetime>1,000µs, Empak cst | |||
| 7773 | 10 | 71.28 | p-type Si:B | [100] | 5" | 610 | P/P | 16-24 | SEMI Prime, 2Flats, Empak cst | |||
| D868 | 10 | 176.40 | p-type Si:B | [100] | 5" | 590 | P/P | 1--35 | SEMI Prime with Notch, TTV<1µm, Bow/Warp<10µm, Empak cst | |||
| A0680 | 5 | 161.28 | p-type Si:B | [100] | 5" | 950 | P/P | 1--20 | SEMI Prime, 1Flat, Empak cst | |||
| A683 | 10 | 216.00 | n-type Si:P | [100] | 5" | 762 ±12 | P/P | 5--35 | SEMI Prime, 1Flat, TTV<1µm, Bow<5µm, Warp<10µm, Measurements and thickness maps for each wafers, Empak cst | |||
| B1459 | 10 | 396.00 | n-type Si:P | [100] | 5" | 762 ±12 | P/P | 5--35 | SEMI Prime, 1Flat, TTV<1µm, Empak cst | |||
| 4" Wafers | A2242 | 2 | 612.00 | Intrinsic Si:- | [553] ±0.3° | 4" | 300 ±15 | P/P | FZ >20,000 | SEMI Prime, 1Flatat <110>, MCC Lifetime>1,500µs, TTV<5µm, Empak cst | ||
| H775 | 11 | 216.00 | p-type Si:B | [110] ±0.5° | 4" | 1,650 | P/E | 10--15 | SEMI Prime, 1Flat at <1,-1,0>, Empak cst | |||
| A1634 | 5 | 177.84 | p-type Si:B | [110] ±1° | 4" | 2,000 | P/P | 1--20 | Prime, 1Flat at <111>±0.5°, Individual csts in Group of 5 wafers | |||
| S7798 | 11 | 53.28 | p-type Si:B | [100] | 4" | 595 ±15 | E/E | 25-45 | SEMI Prime, 2Flats, Empak cst | |||
| 4959 | 7 | 64.80 | p-type Si:B | [100] | 4" | 525 | NP/PN | 10--20 | SEMI Prime, 2Flats, with 150nm of LPCVD Stoichiometric Silicon Nitride on both sides, Empak cst | |||
| A0995 | 4 | 180.00 | p-type Si:B | [100] | 4" | 550 | P/P | 10--20 | SEMI Prime, 2Flats, TTV<1µm, Empak cst | |||
| 12159 | 4 | 71.28 | p-type Si:B | [100] | 4" | 200 | P/P | 5--10 | SEMI Prime, 1Flat, Empak cst | |||
| 7305 | 1 | 159.84 | p-type Si:B | [100] | 4" | 300 | P/P | 5--10 | SEMI Prime, 2Flats, Empak cst | |||
| A2151 | 3 | 85.68 | p-type Si:B | [100] | 4" | 300 | P/P | 5--10 | SEMI Prime, 2Flats, Empak cst | |||
| F060 | 4 | 36.00 | p-type Si:B | [100] | 4" | 300 | P/P | 5--10 | SEMI TEST (Scratched - can be repolished for extra fee), 2Flats, in Unsealed Empak cst | |||
| 5727 | 2 | 18.00 | p-type Si:B | [100] | 4" | 380 | P/E | 5--10 | SEMI TEST (unsealed), 2Flats, Empak cst | |||
| D819 | 1 | 90.00 | p-type Si:B | [100] | 4" | 380 | P/E | 5--10 | SEMI Prime, 1Flat, Back-side slightly darker than normal, in hard cst | |||
| C815 | 2 | 18.00 | p-type Si:B | [100] | 4" | 380 | BROKEN | 5--10 | Broken P/E Wafers, 1Flat, in Empak | |||
| D259 | 2 | 18.00 | p-type Si:B | [100] | 4" | 380 | BROKEN | 5--10 | Broken P/E Wafers, 2Flats, in Empak | |||
| D649 | 1 | 54.00 | p-type Si:B | [100] | 4" | 380 | BROKEN | 5--10 | Broken (largest piece is ~30%), 1Flat, in Empak | |||
| A1355 | 9 | 198.00 | p-type Si:B | [100] | 4" | 475 | P/E | 5--10 | SEMI 1Flat, Both sides polished (Front Prime and Epi-Ready, Back scratched), TTV<0.3µm, Empak cst | |||
| A1679 | 4 | 45.00 | p-type Si:B | [100] | 4" | 525 | P/P | 5--25 | SEMI Prime, 2Flats, TTV<5µm, Empak cst | |||
| 11196 | 15 | 23.76 | p-type Si:B | [100] | 4" | 525 | P/E | 5--10 | SEMI Prime, 2Flats, TTV<5µm, Empak cst | |||
| A0558 | 3 | 269.28 | p-type Si:B | [100] | 4" | 640 ±10 | P/P | 5--10 | SEMI, 2Flats, TTV<1µm, Empak cst | |||
| A1991 | 1 | 158.40 | p-type Si:B | [100] | 4" | 2,000 | P/P | 5--10 | Good Front side, Back-Side with large scratch on back, SEMI, 1Flat, TTV<5µm, Individual cst | |||
| 10436 | 1 | 720.00 | p-type Si:B | [100] | 4" | 25,000 ±50 | C/C | 4--10 | SEMI, 1Flat, TTV<30µm, Bow/Warp<40µm, Individual cst | |||
| B1285 | 4 | 122.40 | p-type Si:B | [100] | 4" | 350 | P/P | 2--10 | SEMI Prime, 1Flat, TTV<5µm, Empak cst | |||
| 11689 | 15 | 64.80 | p-type Si:B | [100] | 4" | 200 | P/P | 1-20 {1.2-4.2} | SEMI Prime, 1Flat, Empak cst | |||
| G997 | 6 | 27.00 | p-type Si:B | [100] | 4" | 300 | P/P | 1--10 | SEMI TEST (Surface Defects), 2Flats, Empak cst | |||
| E485 | 3 | 54.00 | p-type Si:B | [100-4° towards[110]] ±0.5° | 4" | 300 | P/E | 1--10 | SEMI TEST (Surface pits), 2Flats, Empak cst | |||
| A0587 | 3 | 54.00 | p-type Si:B | [100] | 4" | 360 | P/E | 1--20 | SEMI Prime, 1Flat, Empak cst | |||
| G189 | 7 | 36.00 | p-type Si:B | [100] | 4" | 475 | P/E | 1--10 | SEMI Prime, 2Flats, Epi edges for 150µm Epi growth, Empak cst | |||
| F263 | 11 | 9.00 | p-type Si:B | [100] | 4" | 480 | C/C | 1--35 | SEMI TEST (Unpolished wafers with edge chips), 2Flats, Empak cst | |||
| 11988 | 5 | 158.40 | p-type Si:B | [100] | 4" | 500 | P/P | 1-100 | SEMI Prime, 1Flat, Front-side LaserMark, TTV<1µm, Empak cst | |||
| A1348 | 1 | 180.00 | p-type Si:B | [100] | 4" | 500 | P/P | 1--10 | SEMI Prime, 1Flat, TTV<1µm, Empak cst | |||
| K440 | 7 | 43.20 | p-type Si:B | [100] | 4" | 500 | P/P | 1--50 | SEMI Prime, 2Flats, Carbon (0.9-1.1)E16/cc per ASTM F1319, Oxygen (8.4-8.0)E17/cc per ASTM F1188, Empak cst | |||
| A1021 | 8 | 90.00 | p-type Si:B | [100] | 4" | 525 | P/P | >1 | SEMI Prime, 1Flat, TTV<2µm, Empak cst | |||
| A1458 | 3 | 90.00 | p-type Si:B | [100] | 4" | 525 ±35 | P/P | 1--20 | SEMI Prime, 2Flats, TTV<2µm, Empak cst | |||
| F307 | 12 | 10.80 | p-type Si:B | [100] | 4" | 525 | P/P | 1--10 | SEMI TEST (Unsealed, dirt and defects on wafers), 2Flats, Empak cst | |||
| A2278 | 5 | 89.28 | p-type Si:B | [100] | 4" | 525 | P/E | 1--5 | SEMI Prime, 2Flats, With Back-Side LaserMark, TTV<5µm, Empak cst | |||
| F485 | 8 | 90.00 | p-type Si:B | [100] | 4" | 525 | 1--20 | SEMI TEST (Spotted defect) - wafers with three layers of SiO2 and Ge deposited by Electron Beam Evaporation, 2Flats, Empak cst | ||||
| S5870 | 12 | 28.08 | p-type Si:B | [100-0.5°] | 4" | 575 ±10 | E/E | 1--10 | SEMI, 2Flats, Empak cst | |||
| S7799 | 11 | 33.84 | p-type Si:B | [100] | 4" | 590 ±10 | E/E | 1--10 | SEMI, 2Flats, Empak cst | |||
| C273 | 1 | 450.00 | p-type Si:B | [100] | 4" | 620 ±1 | P/P | Jan-50 | SEMI TEST (Scratched), 2 Flats, Ultra flat TTV<0.25µm, Bow<1µm, Warp<6µm, Wafer with LaserMark and meaurements, Can be repolished for additional fee, Empak cst | |||
| B512 | 2 | 90.00 | p-type Si:B | [100] | 4" | 700 ±50 | P/P | 2--8 | SEMI TEST (Defective, scratched, high TTV), 2Flats, in Unsealed Empak cst | |||
| S1020 | 2 | 71.64 | p-type Si:B | [100] | 4" | 1,000 | P/E | >1 | SEMI TEST and unsealed, Empak cst | |||
| A1075 | 1 | 90.00 | p-type Si:B | [100] | 4" | 2,950 ±50 | P/P | 1--35 | SEMI TEST (Scratched), 2Flats, in Unsealed Individual cst | |||
| A2317 | 4 | 212.40 | p-type Si:B | [100] | 4" | 2,950 | P/P | 1--35 | SEMI Prime, 2Flats, Individual cst in Group of 4 wafers | |||
| 11814 | 10 | 176.40 | p-type Si:B | [100] | 4" | 3,000 | P/E | 1--35 | SEMI Prime, 2Flats, Individual cst in Groups of 10 wafers | |||
| A0494 | 1 | 90.00 | p-type Si:B | [100] | 4" | 3,000 | P/E | 1--35 | SEMI TEST (Scratched), 1Flat, Individual cst | |||
| B1079 | 3 | 59.40 | p-type Si:B | [100] | 4" | 3,000 | P/E | 1--35 | SEMI TEST (2 wafers with Chips, 1 wafer Scratched), 2Flats, in Indivicual csts, sold in pack of 3 wafers | |||
| 5737 | 4 | 84.24 | p-type Si:B | [100] | 4" | 890 ±15 | P/P | 0.5-10.0 | SEMI TEST (Scratches), ~100 small holes through wafer in pattern, 1Flat, TTV<8µm, Empak cst | |||
| A0149 | 9 | 63.00 | p-type Si:B | [100] | 99.25 mm | 3,000 | C/C | 0.5-0.6 | 1Flat, Small diameter: 99.25±0.25mm, Packs of 4 & 5 wafers | |||
| B2055 | 8 | 160.56 | p-type Si:B | [100-4° towards[110]] ±0.5° | 4" | 300 | P/E | 0.1-1.5 {0.52-0.63} | SEMI Prime, 2Flats, TTV<5µm, Empak cst | |||
| 7954 | 3 | 219.60 | p-type Si:B | [100] | 4" | 445 ±15 | P/P | 0.1-0.2 | SEMI Prime, 2Flats, TTV<5µm, Empak cst | |||
| A0448 | 2 | 241.20 | p-type Si:B | [100-9.7° towards[110]] ±0.5° | 4" | 525 | P/P | 0.02-1.00 | SEMI Prime, 2Flats, Empak cst | |||
| 3031 | 16 | 35.64 | p-type Si:B | [100-6° towards[110]] ±0.5° | 4" | 525 | P/E | 0.015-0.020 | SEMI Prime, 2Flats, Empak cst | |||
| 11028 | 15 | 30.24 | p-type Si:B | [100-6° towards[110]] ±0.5° | 4" | 525 | P/E | 0.005-0.025 | SEMI Prime, 2Flats (PF @ 110±1°, SF @ 90±5° CW from PF), TTV<5µm, Empak cst | |||
| 5419 | 3 | 50.40 | p-type Si:B | [100] | 4" | 300 | P/P | 0.001-0.005 | SEMI TEST (Scratches on both sides), 2Flats, TTV<5µm, Empak cst | |||
| 6919 | 3 | 140.40 | p-type Si:B | [100] | 4" | 300 | P/E | 0.001-0.010 | SEMI Prime, 2Flats, Empak cst | |||
| D919 | 2 | 90.00 | p-type Si:B | [100] | 4" | 300 | P/E | 0.001-0.010 | SEMI TEST (scratches, in unsealed cst), 2Flats, Back-side LaserMark, Empak cst | |||
| A1354 | 5 | 612.00 | p-type Si:B | [100] | 25.6x25.6mm | 500 | P/P | 0.001-0.005 | Prime 25.6x25.6mm Silicon Frames | |||
| N135 | 2 | 72.00 | p-type Si:B | [100] | 4" | 500 | P/P | 0.001-0.005 | SEMI Prime, 2Flats, Some with striation marks, Empak cst | |||
| A968 | 1 | 900.00 | p-type Si:B | [100] | 4" | 500 | L/L | 0.001-0.200 | Set of 4 Lapped wafer Resistivity Standards (0.007, 0.015, 0.035, 0.127) Ohmcm, in Individual cst | |||
| A119 | 14 | 36.00 | p-type Si:B | [100] | 4" | 525 | P/P | 0.001-0.005 | SEMI Prime, 1Flat, TTV<5µm, Free of Striations, Empak cst | |||
| A0449 | 2 | 100.80 | p-type Si:B | [100] | 4" | 525 | P/E | 0.001-0.005 {0.0013-0.0033} | SEMI Prime, 2Flats, TTV<5µm, Free of Striations, Empak cst | |||
| 5420 | 10 | 17.64 | p-type Si:B | [100] | 4" | 800 | C/C | 0.001-0.005 | SEMI, 2Flats, Some with striation marks, Empak cst | |||
| A1476 | 9 | 143.64 | p-type Si:B | [100] | 4" | 2,000 | P/E | 0.001-0.007 | SEMI Prime, 2Flats, Individual cst, Sold as Group of 9 wafers | |||
| 10717 | 12 | 197.28 | p-type Si:B | [100] ±1° | 4" | 625 | P/E | 0.0007-0.0013 | SEMI Prime, 1Flat, with LaseMark, Empak cst | |||
| S5774 | 1 | 90.00 | p-type Si:B | [100] | 4" | ? | P/P | ? | SEMI TEST, 2Flats, Empak cst | |||
| B1978 | 1 | 468.00 | p-type Si:B | [331] ±0.5° | 4" | 475 | P/P | 0.001-0.002 | Prime, One Flat ([1-10]), TTV<5µm, Bow/Warp<10µm, Empak cst | |||
| A2236 | 3 | 176.40 | p-type Si:B | [111-0.2° towards[11-2]] ±0.1° | 4" | 380 | P/E | 10--20 | SEMI Prime, 1Flat, Empak cst | |||
| 10147 | 14 | 315.00 | p-type Si:B | [111-2.5°] ±1° | 4" | 450 | NOP/EON | 2--8 | SEMI Prime, 1Flat, Both sides with 2µm SiO2, both sides with 250nm low stress silicon nitride over the oxide, Empak cst | |||
| 12028 | 12 | 26.64 | p-type Si:B | [111] ±0.5° | 4" | 525 | P/E | 1--5 | SEMI Prime, 1Flat, TTV<5µm, Bow<15µm, Warp<30µm, Empak cst | |||
| D372 | 13 | 17.28 | p-type Si:B | [111-3°] | 4" | 400 | P/E | 0.015-0.018 | SEMI Prime, 1Flat, Empak cst | |||
| 11084 | 15 | 23.04 | p-type Si:B | [111-4° towards[110]] | 4" | 400 | P/E | 0.002-0.008 | SEMI Prime, 1Flat, Empak cst | |||
| A1849 | 4 | 154.44 | p-type Si:B | [111] ±0.5° | 4" | 335 | P/P | 0.001-0.005 | SEMI Prime, 1Flat, TTV<1µm, Empak cst | |||
| X9136 | 4 | 7.20 | p-type Si:B | [111-4°] | 4" | 550 | E/E | 0.001-100 | SEMI TEST (Resistivity unknown), 1Flat, In Unsealed Empak cst | |||
| X2183 | 13 | 7.20 | p-type Si:B | [111-4°] | 4" | 555 | E/E | 0.001-100 | SEMI TEST (Resistivity unknown), 1Flat, Unsealed Empak cst | |||
| F022 | 8 | 158.40 | p-type Si:B | [111] ±0.3° | 4" | 350 ±5 | P/P | <0.05 | SEMI Prime, 1Flat, TTV<1µm, Bow/Warp<15µm, Empak cst | |||
| X7012 | 2 | 7.20 | p-type Si:B | [111-4°] | 4" | 520 ±10 | E/E | In Unsealed Empak cst | ||||
| X7272 | 5 | 7.20 | p-type Si:B | [111-4°] | 4" | P/E | SEMI TEST, 1Flat, In Unsealed Empak cst | |||||
| X7013 | 3 | 7.20 | p-type Si:B | [111-4°] | 4" | 550 ±15 | E/E | TEST, 1Flat, In Unsealed Empak cst | ||||
| A854 | 7 | 218.88 | p-type Si:B | [753] ±0.5° | 4" | 300 ±15 | P/P | 1-100 | SEMI Prime, 1 Flat 32.5mm @ <211>, TTV<3µm, Empak cst | |||
| 11400 | 12 | 26.64 | n-type Si:P | [110] ±0.5° | 4" | 525 | P/E | 4--6 | SEMI Prime, 2 Flats at [111], SF 30° CW from PF, Empak cst | |||
| 4024 | 11 | 62.64 | n-type Si:As | [110] ±0.5° | 4" | 275 | P/P | 0.001-0.005 | SEMI TEST (Haze, scratches, TTV<15µm), PF at [111] ±0.5°, SF at [111] CW 70.5° ±5° from PF, Empak cst | |||
| 12295 | 15 | 123.84 | n-type Si:As | [110] ±0.5° | 4" | 500 | P/P | 0.001-0.005 | SEMI Prime, 2Flats (PF at <111>, | |||
| - | SF at <111> CW 70.5° ±5° from PF), Empak cst | |||||||||||
| 11582 | 10 | 53.28 | n-type Si:P | [100] | 4" | 400 | P/E | 32-70 | SEMI Prime, 2Flats, Empak cst | |||
| A1813 | 1 | 216.00 | n-type Si:P | [100-0.60° towards[110]] ±0.05° | 4" | 525 | P/E | 5--10 | SEMI Prime, 2Flats, Empak cst | |||
| E830 | 8 | 21.60 | n-type Si:P | [100] | 4" | 350 | P/P | 3--5 | SEMI TEST (Haze, pits, scratches), 2Flats, Empak cst | |||
| C925 | 14 | 9.00 | n-type Si:P | [100] | 4" | 500 ±10 | P/P | 2--5 | SEMI TEST (wafers have spots resembling water splashes, which do not come off), 2Flats, in hard cassettes of 4, 5 & 5 wafers | |||
| A2055 | 13 | 88.56 | n-type Si:P | [100-4° towards[110]] ±0.5° | 4" | 300 | P/E | 1-5 {1.06-1.84} | SEMI Prime, 2Flats, TTV<5µm, Empak cst | |||
| S5763 | 11 | 27.00 | n-type Si:P | [100] ±1° | 4" | 465 ±10 | E/E | 1--3 | SEMI, 1Flat, Empak cst | |||
| 6497 | 10 | 140.40 | n-type Si:P | [100-25° towards[110]] ±0.5° | 4" | 500 | P/P | 1-100 | SEMI Prime, 2Flats, TTV<5µm, Empak cst | |||
| F0709 | 8 | 90.00 | n-type Si:P | [100] | 101mm | 525 | P/P | 1-100 | SEMI Prime, 1Flat, TTV<5µm, Empak cst | |||
| S5932 | 1 | 720.00 | n-type Si:P | [100] | 4" | 20,000 ±100 | P/E | 1--10 | SEMI TEST (Polishing Defects), NO Flats, in Unsealed Individual cst | |||
| 11906 | 12 | 124.56 | n-type Si:P | [100] | 4" | 500 | P/P | 0.5-0.6 | SEMI Prime, 2Flats, Empak cst | |||
| B1876 | 1 | 88.56 | n-type Si:P | [100] | 4" | 500 | P/P | 0.5-0.6 | SEMI Prime, 2Flats, Empak cst | |||
| E134 | 14 | 25.20 | n-type Si:P | [100] | 4" | 275 | P/P | 0.10-0.15 | SEMI TEST (Scratches on both sides), 2Flats, Empak cst | |||
| A2283 | 2 | 285.48 | n-type Si:P | [100] | 4" | 190 | P/P | 0.05-0.15 | SEMI Prime, 2Flats, Bow<5µm, Empak cst | |||
| A0796 | 10 | 95.04 | n-type Si:P | [100] | 4" | 250 | P/P | 0.05-0.20 | SEMI Prime, 1Flat, Empak cst | |||
| E031 | 3 | 53.28 | n-type Si:Sb | [100-6° towards[110]] ±0.5° | 4" | 525 | P/E | 0.015-0.020 | SEMI Prime, 2Flats, Empak cst | |||
| A1454 | 2 | 125.64 | n-type Si:Sb | [100] ±0.3° | 4" | 292.5 ±2.5 | P/P | 0.01-0.02 | SEMI Prime, 2Flats, TTV<5µm, Empak cst | |||
| A2422 | 8 | 72.00 | n-type Si:Sb | [100] | 4" | 300 ±15 | P/P | 0.01-0.02 | SEMI Prime, 2Flats, With Front-Side LaserMark, TTV<5µm, Empak cst | |||
| E1673 | 9 | 74.88 | n-type Si:Sb | [100] ±0.2° | 4" | 300 ±5 | P/P | 0.01-0.02 {0.012-0.018} | SEMI Prime, 2Flats, TTV<3µm, Empak cst | |||
| S5888 | 15 | 104.40 | n-type Si:Sb | [100] ±1° | 4" | 300 | P/P | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst | |||
| TS126 | 6 | 30.24 | n-type Si:Sb | [100] ±1° | 4" | 300 | P/E | 0.01-0.02 {0.014-0.016} | SEMI Prime, 2Flats, Empak cst (24+4+3 wafers) | |||
| F1673 | 17 | 77.04 | n-type Si:Sb | [100] ±0.2° | 4" | 302 ±3 | P/P | 0.01-0.02 {0.012-0.018} | SEMI Prime, 2Flats, TTV<3µm, Empak cst | |||
| 11408 | 13 | 122.40 | n-type Si:Sb | [100] ±0.2° | 4" | 325 ±15 | P/P | 0.01-0.02 {0.011-0.019} | SEMI Prime, 2Flats, TTV<5µm, Empak cst | |||
| TS027 | 15 | 35.28 | n-type Si:Sb | [100-2.5°] ±0.5° | 4" | 380 ±10 | P/POx | 0.01-0.02 {0.012-0.014} | SEMI Prime, 2Flats, TTV<5µm, Back-side LTO 500±100nm, Empak cst | |||
| B0363 | 13 | 54.00 | n-type Si:Sb | [100] | 4" | 400 ±5 | P/P | 0.01-0.02 {0.0149-0.0156} | SEMI Prime, 2Flats, Empak cst | |||
| C0363 | 6 | 72.00 | n-type Si:Sb | [100] | 4" | 500 ±5 | P/P | 0.01-0.02 {0.0149-0.0156} | SEMI Prime, 2Flats, Empak cst | |||
| S1045 | 8 | 68.40 | n-type Si:Sb | [100] | 4" | 500 | P/P | 0.010-0.025 | SEMI Prime, 2Flats, Empak cst | |||
| 10648 | 6 | 159.12 | n-type Si:Sb | [100-4°] ±0.5° | 4" | 1,500 ±50 | P/P | 0.005-0.030 | SEMI Prime, 2Flats, Empak cst | |||
| TS127 | 5 | 28.80 | n-type Si:As | [100] ±1° | 4" | 360 ±15 | P/P | 0.004-0.008 {0.0054-0.0067} | SEMI Prime, 2Flats, TTV<5µm, Empak csts (21+20+20+19+18 wafers) | |||
| U671 | 15 | 28.80 | n-type Si:As | [100] | 4" | 545 | E/E | 0.002-0.004 | SEMI, 1Flat, Empak cst | |||
| 10148 | 5 | 9.00 | n-type Si:As | [100] | 4" | 525 | P/E | 0.001-0.005 | SEMI TEST (unsealed, dirty), 2Flats, TTV<5µm, Unsealed csts of 5 & 18 wafers | |||
| F562 | 3 | 180.00 | n-type Si:As | [100] | 4" | 525 | PlyAP/E | 0.001-0.005 | With layer of Al2O3, ~0.1µm or ~0.05µm thick, Wafers with a matrix of Polycrystalline Silicon dots, Empak cst, | |||
| - | [More Info] | |||||||||||
| A2006 | 2 | 648.00 | n-type Si:Sb | [331] ±0.5° | 4" | 300 ±15 | P/P | 0.01-0.02 | Prime, TTV<5µm, One Flat at <1,-1,0>, 32.5±2.5mm long, Empak cst | |||
| F975 | 4 | 216.00 | n-type Si:Sb | [211] ±0.5° | 4" | 1,600 ±100 | C/C | 0.01-0.02 | SEMI, 1Flat, Wafers can be polished for additional fee, Empak cst | |||
| E395 | 10 | 67.68 | n-type Si:P | [111] | 4" | 1,200 | P/P | 35-85 | SEMI Prime, 2Flats, Empak cst | |||
| Q362 | 16 | 35.64 | n-type Si:P | [111] ±0.5° | 4" | 280 | P/E | 1.3-2.7 | SEMI Prime, 2Flats, Empak cst | |||
| A0289 | 4 | 54.00 | n-type Si:P | [111] ±0.25° | 4" | 500 | P/E | 1-100 | SEMI Prime, 2Flats, Empak cst | |||
| 5637 | 9 | 140.40 | n-type Si:P | [111] ±0.5° | 4" | 750 | P/P | 1-100 {10-13} | SEMI Prime, 2Flats, TTV<5µm, Bow/Warp<10µm, Empak cst | |||
| 10517 | 2 | 1,044.00 | n-type Si:P | [111] ±0.5° | 4" | 10,000 ±50 | P/E | 1-100 | Prime, NO Flats, Individual cst, Sold individually | |||
| A0822 | 3 | 122.40 | n-type Si:P | [111] ±0.5° | 4" | 700 | P/P | 0.15-5.00 | SEMI Prime, NO Flats, with LaserMark, Empak cst | |||
| A2212 | 2 | 90.00 | n-type Si:Sb | [111] ±0.5° | 4" | 500 | P/E | 0.018-0.020 | SEMI Prime, 2Flats, Empak cst | |||
| TS118 | 10 | 14.76 | n-type Si:Sb | [111-4°] ±0.5° | 4" | 381 | P/E | 0.008-0.020 {0.0116-0.0194} | SEMI Prime, 2Flats, HBSD (sand-blasted back-side), in Empak csts of 10×22+24+21 wafers | |||
| TS119 | 10 | 46.44 | n-type Si:Sb | [111-4°] ±0.5° | 4" | 381 | P/E | 0.008-0.020 {0.0108-0.0141} | SEMI Prime, 2Flats, HBSD (sand-blasted back-side), Empak cst (7+3 wafers) | |||
| TS139 | 5 | 35.64 | n-type Si:Sb | [111-4°] ±0.5° | 4" | 381 | P/E | 0.008-0.020 | SEMI Prime, 2Flats, HBSD (sand-blasted back-side), Empak cst (2+5+14+15+18 wafers) | |||
| TS015 | 7 | 26.64 | n-type Si:Sb | [111-1.5°] ±0.15° | 4" | 525 | P/EOx | 0.005-0.018 {0.0129-0.0161} | SEMI Prime, 2Flats, Back-side LTO 400nm thick, Empak cst | |||
| TS065 | 44 | 17.64 | n-type Si:Sb | [111-3°] ±0.2° | 4" | 525 | P/E | 0.005-0.015 {0.0117-0.0143} | SEMI Prime, 2Flats, Empak cst | |||
| TS045 | 12 | 24.48 | n-type Si:As | [111-2.5°] ±0.5° | 4" | 525 | P/EOx | 0.003-0.004 {0.0034-0.0037} | SEMI Prime, 2Flats, TTV<4µm, Back-side: LTO 500nm, Empak cst | |||
| TS122 | 7 | 15.84 | n-type Si:As | [111-4°] ±0.5° | 4" | 525 | P/E | 0.002-0.005 {0.0027-0.0033} | SEMI Prime, 2Flats, HBSD (back-side sand-blasted), TTV<8µm, in Empak csts of 22+22+16+11+7+4 wafers | |||
| TS123 | 5 | 15.84 | n-type Si:As | [111-4°] ±0.5° | 4" | 525 | P/E | 0.0020-0.0035 {0.0017-0.0030} | SEMI Prime, 2Flats, TTV<8µm, in Empak csts of 22 wafers plus several partial csts | |||
| TS159 | 8 | 21.60 | n-type Si:As | [111-4°] ±0.5° | 4" | 280 ±15 | P/E | 0.001-0.004 | SEMI Prime, 2Flats {PF 32.5mm at <110>, SF 90° from PF (not 45°)}, Empak | |||
| D741 | 14 | 76.86 | n-type Si:As | [111-4°] ±0.5° | 4" | 325 | P/EOx | 0.001-0.005 | SEMI Prime, 2Flats, Back-side Sand-blasted with LTO seal, in Empak cassettes (7 + 7 wafers) | |||
| J656 | 15 | 15.84 | n-type Si:As | [111-4°] | 4" | 525 | P/E | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst | |||
| TS030 | 12 | 15.84 | n-type Si:As | [111-4°] ±0.5° | 4" | 525 | P/E | 0.001-0.005 {0.0036-0.0044} | SEMI Prime, 2Flats, Empak (several partial csts) | |||
| TS141 | 9 | 15.84 | n-type Si:As | [111-3.5°] ±0.5° | 4" | 525 | P/E | 0.001-0.005 {0.0039-0.0045} | SEMI Prime, 2Flats, HBSD (sand-blasted back-side), Taper<5µm, Empak cst of 12+12+17+18 wafers | |||
| TS164 | 14 | 15.84 | n-type Si:As | [111-4°] ±0.5° | 4" | 525 | P/E | 0.001-0.005 {0.0036-0.0044} | SEMI Prime, 2Flats, Empak (several partial csts) | |||
| X7209 | 4 | 7.20 | n-type Si:As | [111-4°] | 4" | 625 | E/E | 0.001-0.005 | RTP wafers, SEMI 2Flats (SF 45° from PF), in Unsealed Empak cst | |||
| 3556 | 11 | 32.76 | n-type Si:As | [111] ±0.5° | 4" | 1,000 | P/E | 0.001-0.005 {0.0031-0.0040} | SEMI Prime, 2Flats, TTV<4µm, Bow<10µm, Warp<20µm, Empak cst | |||
| S5775 | 3 | 45.00 | Si | ? | 4" | ? | P/P | ? | SEMI, in Unsealed Empak cst | |||
| 5784 | 4 | 18.00 | Si | [110] ±0.5° | 4" | 525 | C/C | ? | In Unsealed Empak cst | |||
| X7201 | 4 | 7.20 | Si:? | [111-4°] | 4" | P/E | SEMI 1Flat, Resistivity unknown, In Unsealed Empak cst | |||||
| 11811 | 13 | 158.40 | p-type Si:B | [100] | 4" | 500 | OxP/POx | 1--10 | SEMI Prime, 2Flats, DRY Thermal Oxide 50±5nm thick on both sides, Empak cst | |||
| 3" Wafers | ||||||||||||
| Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface); Material - CZ unless noted | ||||||||||||
| Item | Qty in | Price | Material | Orient. | Diam. | Thck | Surf. | Resistivity | Comment | |||
| Stock | $/wafer | (µm) | Ωcm | |||||||||
| A1435 | 10 | $ 82.80 | p-type Si:B | [100] | 3" | 380 | P/P | FZ 1-20 | SEMI Prime, 1Flat, MCC Lifetime>500µs, Empak cst | |||
| A0572 | 12 | $ 89.28 | p-type Si:B | [100] | 3" | 500 | P/P | FZ 0.5-10.0 | SEMI Prime, 2Flats, Empak cst | |||
| I246 | 3 | $ 71.28 | p-type Si:B | [100] | 3" | 525 | P/E | FZ 0.5-10.0 | SEMI Prime, 2Flats, Empak cst | |||
| S5901 | 13 | $ 53.28 | p-type Si:B | [100] | 3" | 584 | E/E | FZ 0.5-10.0 | SEMI, 2Flats, Empak cst | |||
| M942 | 5 | $ 107.64 | p-type Si:B | [111] ±0.5° | 3" | 475 | P/E | FZ >4,400 | SEMI Prime, 1Flat, TTV<5µm, Empak cst | |||
| S5554 | 4 | $ 105.30 | p-type Si:B | [111] ±0.25° | 3" | 400 | P/E | FZ >100 | SEMI Prime, 1Flat, Empak cst | |||
| A1448 | 5 | $ 207.36 | p-type Si:B | [111-4° towards[110]] ±0.5° | 3" | 380 | P/P | FZ 1-5 | SEMI Prime, 1Flat, TTV<5µm, MCC Lifetime>3,000µs, Empak cst | |||
| F421 | 2 | $ 69.84 | n-type Si:P | [100] | 3" | 300 | P/P | FZ 45-52 | SEMI Prime, 2Flats, Empak cst | |||
| 7059 | 12 | $ 68.40 | n-type Si:P | [100] | 3" | 850 | P/E | FZ 40-140 | SEMI Prime, 2Flats, Empak cst | |||
| 5753 | 7 | $ 143.28 | n-type Si:P | [211-5°] ±0.5° | 3" | 508 | P/P | FZ >50 | Prime, 1Flat, Empak cst | |||
| 5750 | 13 | $ 125.28 | n-type Si:P | [211-5°] ±0.5° | 3" | 508 | P/P | FZ 25-75 | Prime, 1Flat, Empak cst | |||
| 5752 | 7 | $ 143.28 | n-type Si:P | [211-5°] ±0.5° | 3" | 508 | P/P | FZ 25-75 | Prime, 1Flat, Empak cst | |||
| 5758 | 4 | $ 179.64 | n-type Si:P | [211] ±0.5° | 3" | 508 | P/P | FZ 25-75 | Prime, 1Flat, Empak cst | |||
| 5754 | 9 | $ 130.68 | n-type Si:P | [211] ±0.5° | 3" | 1,016 | P/P | FZ 25-75 | Prime, 1Flat, Empak cst | |||
| G116 | 6 | $ 32.40 | n-type Si:P | [111] ±0.5° | 3" | 415 ±15 | E/E | FZ 10,000-12,000 | SEMI, 1Flat, MCC Lifetime>1,500µs, Empak cst | |||
| 5707 | 4 | $ 86.40 | n-type Si:P | [111] ±0.5° | 3" | 370 | P/E | FZ >5,000 | SEMI Prime, 1Flat, Empak cst | |||
| F264 | 1 | $ 328.68 | n-type Si:P | [111] ±0.5° | 3" | 675 | P/P | FZ >5,000 | SEMI Prime, 1Flat, TTV<4µm, MCC Lifetime>800µs, Empak cst | |||
| I978 | 3 | $ 140.40 | n-type Si:P | [111] ±0.5° | 3" | 380 | P/E | FZ 4,000-8,000 | SEMI Prime, 1Flat, in hard cassettes of 1 & 2 wafers | |||
| K978 | 1 | $ 90.00 | n-type Si:P | [111] ±0.5° | 3" | 380 | BROKEN | FZ 4,000-8,000 | Broken P/E wafer, 1Flat, Soft cst | |||
| 2116 | 13 | $ 32.40 | n-type Si:P | [111] ±0.5° | 3" | 415 ±15 | E/E | FZ 2,000-5,000 | SEMI Prime, 1Flat, MCC Lifetime>1,500µs, Empak cst | |||
| H914 | 7 | $ 89.64 | n-type Si:P | [111] ±1.0° | 3" | 450 | P/P | FZ 182-196 | SEMI Prime, 1Flat, Empak cst | |||
| G0128 | 5 | $ 143.64 | Intrinsic Si:- | [100] | 3" | 380 | P/E | FZ >20,000 | SEMI Prime, 1Flat, MCC Lifetime>1,000µs, Empak cst | |||
| K834 | 1 | $ 159.84 | Intrinsic Si:- | [100] | 3" | 380 | P/E | FZ >20,000 | SEMI TEST (unpolished side has stain), 1Flat, Empak cst | |||
| A2030 | 2 | $ 176.40 | Intrinsic Si:- | [100] | 3" | 381 | P/E | FZ >20,000 {20,630-90,500} | SEMI Prime, TTV<5µm, Empak cst | |||
| 11463 | 10 | $ 78.48 | Intrinsic Si:- | [111] ±0.5° | 3" | 380 | P/E | FZ >20,000 | SEMI Prime, 1Flat, MCC Lifetime>1,000µs, Empak cst | |||
| I667 | 5 | $ 140.40 | p-type Si:B | [110] ±0.5° | 3" | 380 | P/E | >100 | SEMI Prime, 2Flats (PF @ [111], SF @ [111] CW 70.5° from PF), in Empak cassettes of 1, 2 & 2 wafers | |||
| 5928 | 15 | $ 51.84 | p-type Si:B | [110] | 3" | 750 | P/E | >100 | SEMI Prime, 2Flats {PF at [111], SF at [111] CW 70.5° from PF}, Empak cst | |||
| S5806 | 12 | $ 45.00 | p-type Si:B | [110] ±0.5° | 3" | 860 | E/E | 15-50 | SEMI, 2Flats, Empak cst | |||
| E455 | 16 | $ 23.04 | p-type Si:B | [110] ±0.5° | 3" | 381 | P/E | 0.003-0.005 | SEMI Prime, Primary Flat @ [111]±0.5°, Secondary Flat @ [111] CW 109.5±2° from PF, Empak cst | |||
| 11121 | 7 | $ 17.64 | p-type Si:B | [100] | 3" | 380 | P/E | 7--9 | SEMI Prime, 2Flats, TTV<5µm, Empak cst (Cassettes of 17 & 15 wafers) | |||
| K342 | 10 | $ 23.04 | p-type Si:B | [100] | 3" | 300 | P/P | 5--10 | SEMI Prime, 2Flats, Empak cst | |||
| 7778 | 10 | $ 23.04 | p-type Si:B | [100] | 3" | 300 | P/P | 1--10 | SEMI Prime, 2Flats, Empak cst | |||
| I733 | 2 | $ 450.00 | p-type Si:B | [100] | 3" | 380 | FeP/E | 1-100 | SEMI Prime, 2Flats, with Thin film of Iron (Fe), 25±15nm thick on polished side, Empak cst | |||
| S5865 | 6 | $ 54.00 | p-type Si:B | [100-6° towards[110]] ±0.5° | 3" | 381 | P/E | 1--10 | SEMI Prime, 2Flats, Empak cst | |||
| 6826 | 7 | $ 270.00 | p-type Si:B | [100] | 3" | 475 | P/P | 1--50 | SEMI Prime, 2Flats, Ultra flat TTV<0.3µm, Empak cst | |||
| P343 | 14 | $ 68.40 | p-type Si:B | [100] | 3" | 500 | P/P | 1-100 | SEMI Prime, 1Flat, Empak cst | |||
| O344 | 9 | $ 86.40 | p-type Si:B | [100] | 3" | 600 | P/P | 1-100 | Prime, 1Flat, Empak cst | |||
| A0916 | 10 | $ 179.28 | p-type Si:B | [100] | 3" | 640 | P/P | 1-100 | SEMI Prime, 2Flats, TTV<1µm, Front LaserMark, Empak cst | |||
| C0583 | 1 | $ 288.00 | p-type Si:B | [100] | 3" | 2,000 | P/P | 1--20 | SEMI Prime, 2Flats, Individual cst | |||
| 4394 | 7 | $ 54.00 | p-type Si:B | [100] | 3" | 300 | P/P | 0.5-10.0 | SEMI Prime, 1Flat, TTV<2µm, Empak cst | |||
| S5853 | 7 | $ 107.64 | p-type Si:B | [100] | 3" | 315 | P/P | 0.5-10.0 | SEMI Prime, 1Flat, TTV<3µm, Empak cst | |||
| L271 | 1 | $ 338.40 | p-type Si:B | [100] ±1° | 3" | 318 ±7 | P/P | 0.5-10.0 | SEMI Prime, 2Flats, TTV<1µm, Empak cst | |||
| T206 | 8 | $ 57.60 | p-type Si:B | [100] | 3" | 3,050 ±50 | C/C | >0.5 | 1Flat, Individual cst (can be ordered singly) | |||
| J014 | 9 | $ 18.00 | p-type Si:B | [100] | 3" | 250 | BROKEN | 0.15-0.20 | Broken wafers, in Epak cst | |||
| H558 | 10 | $ 68.40 | p-type Si:B | [100] | 3" | 356 | P/P | 0.015-0.020 | SEMI Prime, 2Flats, Empak cst | |||
| I600 | 9 | $ 46.80 | p-type Si:B | [100] | 3" | 185 | P/P | 0.01-0.04 | SEMI Prime, 1Flat, Empak cst | |||
| 2248 | 1 | $ 90.00 | p-type Si:B | [100] | 3" | 300 | P/E | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst | |||
| G989 | 1 | $ 90.00 | p-type Si:B | [100] | 3" | 380 | P/P | 0.01-0.02 | SEMI Prime, 2Flats, Empak cst | |||
| TS130 | 2 | $ 90.00 | p-type Si:B | [100] | 3" | 381 | P/E | 0.002-0.005 {0.0037-0.0039} | SEMI Prime, 2Flats, TTV<7µm, Free of Striations, Empak cst | |||
| 11957 | 14 | $ 720.00 | p-type Si:B | [100] | 3" | 50 ±5 | P/P | 0.0012-0.0015 | SEMI Prime, 1Flat, TTV<5µm, Empak cst, In Groups of 2 wafers | |||
| A1957 | 8 | $ 540.00 | p-type Si:B | [100] | 3" | 50 ±5 | BROKEN | 0.0012-0.0015 | 1Flat, TTV<5µm, Group of 8 wafers individually packed: 2 wafers cracked in half, 5 with chips and 1 with crack on edge, sold as a sealed set of 8 wafers for $300 | |||
| S5866 | 7 | $ 54.00 | p-type Si:B | [100] | 3" | 390 ±10 | E/E | <100 | SEMI, 2Flats, coin roll | |||
| 3366 | 10 | $ 176.40 | p-type Si:B | [5,5,12] ±0.5° | 3" | 380 | P/E | 1--10 | SEMI Prime, One Flat, Empak cst | |||
| 6949 | 8 | $ 119.88 | p-type Si:B | [111] | 3" | 2,300 | P/P | 4--7 | SEMI Prime, 1Flat, Individual cst, In Group of 8 wafers | |||
| A1898 | 4 | $ 159.48 | p-type Si:B | [111] ±0.02° | 3" | 350 | P/P | 1--10 | SEMI Prime, 1Flat, Empak cst | |||
| A068 | 3 | $ 141.12 | p-type Si:B | [111] ±0.5° | 3" | 458 | P/P | 0.80-1.05 | SEMI Prime, 1Flat, Empak cst | |||
| A1743 | 4 | $ 79.92 | p-type Si:B | [111] ±0.5° | 3" | 300 | P/P | 0.3-0.4 {0.33-0.36} | SEMI Prime, 1Flat, TTV<5µm, Empak cst | |||
| H120 | 10 | $ 26.64 | p-type Si:B | [111-4°] ±0.5° | 3" | 381 | P/EOx | 0.01-0.02 {0.0145-0.0148} | SEMI Prime, 1Flat, Back-side LTO 0.35±0.05µm thick, Empak cst | |||
| S5909 | 13 | $ 35.64 | p-type Si:B | [111-4° towards[-211]] ±0.5° | 3" | 890 | P/E | 0.001-0.005 | SEMI TEST (Can be repolished), 2Flats, Soft cst | |||
| A208 | 9 | $ 113.04 | n-type Si:P | [510] ±0.5° | 3" | 1,000 | P/E | 1-100 | Prime, NO Flats, Back-side rough etched, Empak cst | |||
| F092 | 2 | $ 284.94 | n-type Si:P | [110] ±0.5° | 3" | 381 | P/E | 11--15 | SEMI Prime, 2Flats, TTV<15µm, Individual cst | |||
| C720 | 14 | $ 87.84 | n-type Si:P | [110] ±0.5° | 3" | 381 | P/E | 1--10 | SEMI Prime, SEMI Flat (one) @ <1,-1,0>, in Empak cassettes of 7 + 7 wafers | |||
| 11270 | 15 | $ 216.00 | n-type Si:P | [100] ±1.0° | 3" | 3,000 ±100 | P/P | 10--12 | Prime, NO Flats, Individual cst, Packs of 5 & 10 wafers | |||
| A0978 | 5 | $ 864.00 | n-type Si:P | [100] | 3" | 170 ±1 | P/P | 1--10 | SEMI Prime, NO Flats, Super Flat, TTV<1µm, Empak cst | |||
| B0978 | 3 | $ 396.00 | n-type Si:P | [100] | 3" | 170 ±1 | P/P | 1--10 | SEMI TEST (Front Side Perfect, Back Side Scratched), NO Flats, Super Flat, TTV<1µm, Empak cst | |||
| B1793 | 2 | $ 90.00 | n-type Si:P | [100] | 3" | 300 | P/P | 1--10 | SEMI Prime, 2Flats, TTV<1µm, Empak cst | |||
| A0564 | 9 | $ 72.00 | n-type Si:P | [100] | 3" | 350 | P/P | 1--3 | SEMI Prime, 2Flats, TTV<1µm, Empak cst | |||
| D316 | 1 | $ 90.00 | n-type Si:P | [100] | 3" | 350 | P/P | 1--3 | SEMI Prime, 2Flats, Empak cst | |||
| 12036 | 15 | $ 1,062.00 | n-type Si:P | [100] | 3" | 380 | SiNOxP/EOxSiN | 1--10 | SEMI Prime, 1Flat, Wet Thermal Oxide 5µm ±5% thick over polished & etched sides, LPCVD Low Stress Silicon Nitride 350nm ±5% thick over Oxide on both sides, Empak cassette of 15 | |||
| E252 | 19 | $ 46.80 | n-type Si:P | [100] | 3" | 381 | P/P | 1-20 {1.25-2.50} | SEMI Prime, 1Flat, TTV<1µm, Empak cst | |||
| N150 | 16 | $ 24.48 | n-type Si:P | [100] | 3" | 381 | P/P | 1--5 | SEMI Prime, 1Flat, TTV<5µm, Bow/Warp<10µm, Empak cst | |||
| S5929 | 15 | $ 10.80 | n-type Si:P | [100] | 3" | 400 | P/E | 1--50 | SEMI Test, 1Flat, Empak cst | |||
| A312 | 11 | $ 140.40 | n-type Si:P | [100] | 3" | 450 | P/P | 1--10 | SEMI Prime, 1Flat, LaserMark, TTV<2µm, Bow<10µm, Empak cst | |||
| S5856 | 5 | $ 40.68 | n-type Si:P | [100-4°] ±0.5° | 3" | 500 | P/E | 1--20 | SEMI Prime, 2Flats, Empak cst | |||
| H313 | 10 | $ 143.64 | n-type Si:P | [100] | 3" | 650 | P/P | 1--10 | SEMI Prime, 1Flat, LaserMark, TTV<2µm, Bow<10µm, Empak cst | |||
| A0873 | 2 | $ 176.40 | n-type Si:P | [100] | 3" | 5,000 | P/E | 1-100 | SEMI Prime, 1Flat, Individual cst, Pack of 2 wafers | |||
| A2189 | 1 | $ 194.40 | n-type Si:P | [100] | 3" | 5,000 | P/E | 1-100 | SEMI Prime, 1Flat, Individual cst | |||
| B2381 | 5 | $ 123.84 | n-type Si:P | [100] | 3" | 5,000 | P/E | 1-100 | SEMI Prime, 1Flat, Individual cst | |||
| A2314 | 11 | $ 120.24 | n-type Si:P | [100] | 3" | 5,020 ±15 | P/E | 1-100 | SEMI Prime, 1Flat, Individual cst, In Groups of 7 + 4 wafers | |||
| S5921 | 2 | $ 179.64 | n-type Si:P | [100] | 3" | 7,620 ±100 | P/E | 1--10 | SEMI, TEST (Edge Chips), NO Flats, in individual cassettes (Sold in Packs of 2 wafers) | |||
| J763 | 4 | $ 45.00 | n-type Si:Sb | [100] | 3" | 300 | P/E | 0.02-0.04 | SEMI Prime, 2Flats, in hard cassettes of 2 wafers | |||
| U156 | 14 | $ 57.60 | n-type Si:As | [100] | 3" | 300 | P/P | 0.001-0.005 | SEMI Prime, 1Flat, Back-side has a non-Prime polish, Empak cst | |||
| 4096 | 16 | $ 20.88 | n-type Si:As | [100] | 3" | 380 | P/EOx | 0.001-0.005 | SEMI Prime, 2Flats, LTO Back-side seal 0.5µm thick, Empak cst | |||
| A542 | 1 | $ 45.00 | n-type Si:As | [100] | 3" | 380 | BROKEN | 0.001-0.005 | Many broken pieces from one wafer, Biggest pieces are ~5% of total 3" wafer | |||
| 5721 | 10 | $ 51.84 | n-type Si:P | [111] ±1.0° | 3" | 1,500 | P/P | 31-35 | SEMI Prime, 1Flat, Empak cassettes of 10 + 10 + 9 wafers | |||
| 1263 | 5 | $ 86.40 | n-type Si:P | [111] ±0.5° | 3" | 1,400 | P/E | 25-35 | SEMI Prime, 1Flat, in individual cassettes (sold in groups of 5 wafers) | |||
| G271 | 13 | $ 70.56 | n-type Si:P | [111] ±0.5° | 3" | 500 | P/E | >10 | SEMI Prime, 1Flat, Empak cst | |||
| G206 | 13 | $ 17.64 | n-type Si:P | [111-5° towards[110]] ±0.25° | 3" | 1,000 | P/E | >5 | SEMI Prime, 1Flat, in hard cassettes of 6 & 7 wafers | |||
| S5552 | 2 | $ 90.00 | n-type Si:P | [111] ±0.5° | 3" | 380 | P/E | 1--10 | SEMI Prime, Empak cst | |||
| TS001 | 12 | $ 17.64 | n-type Si:P | [111-3.0°] ±1° | 3" | 381 | P/E | 1-20 {3-8} | SEMI Prime, 2Flats, TTV<5µm, Bow<8µm, Warp<16µm, Thickness measured 380±15µm, Empak cst | |||
| F136 | 13 | $ 63.00 | n-type Si:P | [111] ±0.5° | 3" | 1,000 | P/P | 0.5-2.0 | SEMI Prime, 2Flats, Empak cst | |||
| 2256 | 10 | $ 32.40 | n-type Si:Sb | [111] ±0.5° | 3" | 380 | P/E | 0.019-0.026 | SEMI Prime, 2Flats, in Empak cassettes of 5 wafers | |||
| TS024 | 12 | $ 15.84 | n-type Si:Sb | [111-3.5°] ±0.5° | 3" | 381 | P/E | 0.008-0.016 {0.0142-0.0155} | SEMI Prime, 2Flats, TTV<5µm, Empak cst | |||
| TS131 | 13 | $ 15.84 | n-type Si:Sb | [111-3.5°] ±0.5° | 3" | 381 | P/E | 0.008-0.016 {0.0118-0.0133} | SEMI Prime, 2Flats, TTV<6µm, Empak cst (5×25+19+11+5+3 wafers) | |||
| TS070 | 3 | $ 54.00 | n-type Si:Sb | [111-2.5°] ±0.5° | 3" | 381 | P/E | 0.005-0.016 | SEMI Prime, 1Flat, TTV<5µm, Empak cst | |||
| TS056 | 4 | $ 15.48 | n-type Si:Sb | [111-1.5°] ±0.5° | 3" | 700 | P/E | 0.005-0.018 {0.0154-0.0172} | SEMI Prime, 2Flats, Empak cst (14+15 wafers) | |||
| TS133 | 10 | $ 14.04 | n-type Si:As | [111-3°] ±0.5° | 3" | 381 | P/E | 0.002-0.004 {0.0023-0.0028} | SEMI Prime, 2Flats, Empak cst (18+17 wafers) | |||
| E380 | 10 | $ 17.28 | n-type Si:As | [111-4°] ±0.5° | 3" | 380 | P/E | 0.001-0.005 | SEMI Prime, 2Flats, Empak cst | |||
| TS023 | 16 | $ 14.04 | n-type Si:As | [111-3°] ±0.5° | 3" | 381 | P/E | 0.0010-0.0045 {0.0027-0.0037} | SEMI Prime, 2Flats, Empak cst | |||
| C000 | 4 | $ 45.00 | Si | 3" | 300 ±50 | P/P | Prime polish, Unlabeled wafers, Very good surface, other specifications unknown, Empak cst | |||||
| 1855 | 13 | $ 28.44 | p-type Si:B | [100] | 3" | 380 | OxP/EOx | 10--20 | SEMI Prime, 2Flats, DRY Thermal Oxide (5-7)nm thick, on both sides, hard cst | |||
| S5777 | 10 | $ 10.80 | Si | ??? | 3" | ? | P/P | ? | SEMI TEST (Unsealed), Empak cst | |||
| S5778 | 6 | $ 10.80 | Si | 3" | P/P | SEMI TEST (Unsealed), Empak cst | ||||||
2" Wafers | ||||||||||||
| Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface); Material - CZ unless noted | ||||||||||||
| Item | Qty in | Price | Material | Orient. | Diam. | Thck | Surf. | Resistivity | Comment | |||
| Stock | $/wafer | (µm) | Ωcm | |||||||||
| 5580 | 10 | $ 68.40 | p-type Si:B | [110] ±0.5° | 2" | 279 | P/E | FZ >1,000 | Prime, 2Flats (PF at <111>, SF at <111> CW 70.5° from PF), hard cst | |||
| 11464 | 6 | $ 123.12 | p-type Si:B | [100] | 2" | 235 | P/P | FZ 1-5 | SEMI Prime, 1Flat, MCC Lifetime>1,000µs, hard cst | |||
| D769 | 7 | $ 50.40 | p-type Si:B | [111] ±0.5° | 2" | 500 | P/P | FZ 5,000-6,500 | SEMI TEST, 1Flat, unsealed hard cassette | |||
| L609 | 5 | $ 68.40 | p-type Si:B | [111] ±0.5° | 2" | 275 | P/E | FZ 3,500-5,600 | SEMI Prime, 1Flat, MCC Lifetime>2,000µs, hard cst | |||
| J688 | 13 | $ 86.40 | p-type Si:B | [111-7° towards[110]] ±0.5° | 2" | 279 | P/P | FZ >2,000 | SEMI Prime, 1Flat, hard cst | |||
| F783 | 1 | $ 180.00 | p-type Si:B | [111] ±0.5° | 2" | 331 | P/E | FZ 2,000-5,000 | SEMI TEST (Scratched), 1Flat, soft cst | |||
| G783 | 4 | $ 86.40 | p-type Si:B | [111] ±0.5° | 2" | 331 | P/E | FZ 2,000-5,000 | SEMI Prime, 1Flat, soft cst | |||
| B027 | 3 | $ 54.00 | p-type Si:B | [111] | 2" | 381 | P/E | FZ 2,000-5,000 | SEMI TEST (scratched, cannot be recleaned), 1Flat, hard cst | |||
| 2833 | 16 | $ 30.24 | p-type Si:B | [111] ±0.5° | 2" | 280 ±15 | P/E | FZ >1,000 | SEMI Prime, 1Flat, hard cst | |||
| A201 | 6 | $ 74.16 | p-type Si:B | [111] | 2" | 300 | P/P | FZ 730-1,050 | SEMI Prime, 1Flat, hard cst | |||
| A0895 | 5 | $ 316.80 | p-type Si:B | [755] ±0.5° | 2" | 280 | P/P | FZ 1-10 | SEMI Prime, 1Flat at <0,-1,1>, MCC Lifetime>1,200µs, hard cst | |||
| B049 | 8 | $ 68.40 | n-type Si:P | [110] ±1° | 2" | 525 | P/E | FZ 5,000-10,000 | SEMI Prime, 2Flats (PF at [111]±0.5°, SF at [111] CW 70.5° from PF), MCC Lifetime>1,000µs, in hard cassettes of 7, 8, 8 wafers | |||
| C049 | 6 | $ 108.00 | n-type Si:P | [110] ±1° | 2" | 525 | P/E | FZ 5,000-10,000 | SEMI Prime, 2Flats (PF at [111]±0.5°, SF at [111] CW 70.5° from PF), MCC Lifetime>1,000µs, hard cst | |||
| 2894 | 13 | $ 81.00 | n-type Si:P | [110] | 2" | 900 | P/E | FZ 130-350 | SEMI Prime, 1Flat at <1,-1,0>, hard cst | |||
| 4032 | 6 | $ 108.00 | n-type Si:P | [110] ±0.5° | 2" | 900 | P/E | FZ 50-100 | SEMI Prime, 1Flat at <1,-1,0>±0.5°, hard cst | |||
| A0843 | 15 | $ 113.04 | n-type Si:P | [100] | 2" | 500 | P/P | FZ >5,000 | SEMI Prime, 2Flats, MCC Lifetime>1,000µs, hard cst | |||
| 10532 | 6 | $ 88.56 | n-type Si:P | [100] | 2" | 500 | P/P | FZ ~200 | SEMI Prime, 2Flats, hard cst | |||
| 11571 | 14 | $ 64.08 | n-type Si:P | [100] | 2" | 300 | P/P | FZ >100 | SEMI Prime, 2Flats, hard cst | |||
| A0547 | 1 | $ 432.00 | n-type Si:P | [111] ±0.5° | 2" | 6,350 ±100 | C/C | FZ 5,000-13,000 | NO Flats, Individual cst | |||
| E780 | 8 | $ 50.40 | n-type Si:P | [111] ±0.5° | 2" | 280 | P/P | FZ 2,000-4,000 | SEMI Prime, 1Flat, TTV<5µm, hard cst | |||
| 7264 | 15 | $ 68.40 | n-type Si:Sb | [111-2° towards[110]] | 2" | 280 | P/E | FZ 0.008-0.015 | SEMI Prime, 1Flat, hard cst | |||
| A1629 | 1 | $ 2,520.00 | n-type Si:P | [011] ±2° | 2" | 6,000 ±50 | P/P | FZ NTD 500-550 | SEMI Prime, 1Flat @ <211>, made from Topsil Ingot, MCC Lifetime>1,000µs, Individual cst | |||
| B1497 | 2 | $ 324.00 | Intrinsic Si:- | [100] | 2" | 250 | P/P | FZ >20,000 | SEMI Prime, 1Flat, MCC Lifetime>1,000µs, TTV<5µm, hard cst | |||
| 12272 | 9 | $ 71.64 | Intrinsic Si:- | [100] | 2" | 280 | P/P | FZ >20,000 | SEMI Prime, 1Flat, MCC Lifetime>1,000µs, hard cst | |||
| A1465 | 2 | $ 161.28 | Intrinsic Si:- | [100] | 2" | 280 | P/P | FZ >20,000 | SEMI Prime, 1Flat, MCC Lifetime>1,000µs, hard cst | |||
| A0413 | 1 | $ 275.04 | Intrinsic Si:- | [100] | 2" | 280 | P/E | FZ >20,000 | SEMI Prime, 1Flat, MCC Lifetime>1,000µs, hard cst | |||
| A1498 | 3 | $ 176.40 | Intrinsic Si:- | [100] | 2" | 500 ±10 | P/P | FZ >20,000 | SEMI Prime, 1Flat, MCC Lifetime>1,000µs, in hard cst | |||
| A1921 | 7 | $ 141.84 | Intrinsic Si:- | [100] | 2" | 500 | P/P | FZ >20,000 | SEMI Prime, 1Flat, MCC Lifetime>1,000µs, hard cst | |||
| 11241 | 9 | $ 105.84 | Intrinsic Si:- | [100] | 2" | 500 | P/E | FZ >20,000 | SEMI Prime, 1Flat, MCC Lifetime>1,000µs, hard cst | |||
| F319 | 13 | $ 89.64 | Intrinsic Si:- | [100] | 2" | 500 ±10 | P/E | FZ >20,000 | SEMI Prime, 1Flat, MCC Lifetime>1,000µs, hard cst | |||
| B0241 | 1 | $ 324.00 | Intrinsic Si:- | [100] | 2" | 10,100 | C/C | FZ >20,000 | 1Flat, MCC Lifetime>1,000µs, unsealed individual hard csts | |||
| 12129 | 5 | $ 126.00 | Intrinsic Si:- | [100] | 2" | 100 ±10 | P/P | FZ >10,000 {22,000-26,000} | SEMI Prime, 1Flat, TTV<5µm, hard cst, Group of 5 wafers | |||
| A2129 | 10 | $ 126.00 | Intrinsic Si:- | [100] | 2" | 100 ±10 | P/E | FZ >10,000 {22,000-26,000} | SEMI Prime, 1Flat, TTV<5µm, hard cst, Packs of 10+10+6 wafers | |||
| C2122 | 3 | $ 125.64 | Intrinsic Si:- | [100] | 2" | 280 | P/E | FZ 10,000-20,000 | SEMI Prime, 1Flat, TTV<2µm, hard cst | |||
| A1556 | 5 | $ 195.84 | Intrinsic Si:- | [100] | 2" | 331 ±1 | P/P | FZ >10,000 | Superflat central 1"Ø, SEMI, 1Flat, MCC Lifetime>1,000µs, TTV<1µm, hard cst | |||
| A1566 | 5 | $ 266.40 | Intrinsic Si:- | [100] | 2" | 341 ±1 | P/P | FZ >10,000 | SEMI Prime, 1Flat, MCC Lifetime>1,000µs, hard cst | |||
| A0269 | 4 | $ 97.56 | Intrinsic Si:- | [100] | 2" | 350 | P/P | FZ >10,000 | SEMI Prime, 1Flat, MCC Lifetime>1,000µs, hard cst | |||
| A1773 | 15 | $ 321.12 | Intrinsic Si:- | [221] ±1° | 2" | 500 | P/P | FZ >20,000 | SEMI Prime, 1Flat at <1,-1,0>, MCC Lifetime>1,000µs, hard cst | |||
| A0750 | 12 | $ 77.04 | Intrinsic Si:- | [111] ±0.5° | 2" | 280 | P/P | FZ >20,000 | SEMI Prime, 1Flat, MCC Lifetime>1,000µs, hard cst | |||
| F222 | 7 | $ 125.64 | Intrinsic Si:- | [111] ±0.5° | 2" | 330 | P/P | FZ >20,000 | SEMI Prime, 1Flat, MCC Lifetime>1,000µs, hard cst | |||
| E397 | 6 | $ 86.40 | Intrinsic Si:- | [111] ±0.2° | 2" | 300 ±15 | P/P | FZ >10,000 | SEMI Prime, 1Flat, 2 extra scratched wafers at no extra charge, hard cst | |||
| G613 | 9 | $ 141.84 | Intrinsic Si:- | [111] ±0.5° | 2" | 500 | P/E | FZ >10,000 | SEMI Prime, 1Flat, hard cst | |||
| A2237 | 6 | $ 631.44 | Intrinsic Si:- | [643] ±1° | 2" | 500 | P/P | FZ >20,000 | SEMI Prime, 1Flat 16±2mm at <1,-1,0>, with Back-Side LaserMark, MCC Lifetime>1,000µs, TTV<5µm, hard cst | |||
| A2049 | 8 | $ 129.96 | p-type Si:B | [110] ±0.1° | 2" | 500 | P/P | 1--10 | Prime, 1Flat, TTV<5µm, hard cst | |||
| J783 | 18 | $ 18.00 | p-type Si:B | [110] ±0.5° | 2" | 500 | P/E | 1--35 | SEMI Prime, 1Flat at <1,-1,0>±1°, hard cst | |||
| A0442 | 9 | $ 104.04 | p-type Si:B | [110] ±0.5° | 2" | 200 | P/P | 0.009-0.011 | SEMI Prime, 1Flat at <111>±1°, hard cst | |||
| C118 | 3 | $ 36.00 | p-type Si:B | [100] | 2" | 300 | P/E | 5--10 | SEMI Prime, 1Flat, hard cst | |||
| A0351 | 4 | $ 143.64 | p-type Si:B | [100] | 2" | 762 ±12 | P/P | 5--35 | SEMI Prime, NO Flats, TTV<1µm, Bow<2.5µm, Warp<4µm, hard cst | |||
| A1353 | 5 | $ 648.00 | p-type Si:B | [100] | 25.6mm×25.6mm | 350 | P/P | 2--10 | Prime, TTV<5µm, 25.6×25.6mm Silicon Frames | |||
| 12427 | 5 | $ 141.84 | p-type Si:B | [100] | 2" | 100 ±10 | P/P | 1--10 | SEMI Prime, 1Flat, TTV<5µm, Individual wafer cst | |||
| 12144 | 5 | $ 225.00 | p-type Si:B | [100] | 2" | 100 ±15 | P/E | 1-100 | SEMI Prime, 1Flat, hard cst, Packs of 5 wafers | |||
| F708 | 5 | $ 105.48 | p-type Si:B | [100] | 40mm | 250 | P/E | 1-100 | SEMI Prime, 1Flat, Individual cst, Pack of 5 wafers | |||
| A0021 | 13 | $ 36.00 | p-type Si:B | [100] | 2" | 275 ±5 | P/P | 1-100 | SEMI Prime, 2Flats, TTV<5µm, Bow/Warp<10µm, Faint impression from polishing pad on back-side (removable upon request), hard cst | |||
| B0720 | 7 | $ 176.40 | p-type Si:B | [100] | 2" | 775 ±10 | P/P | 1--35 | SEMI Prime, 1Flat, TTV<1.5µm, Bow<8µm, LaserMark & Thickness, TTV, Bow data recorded for each wafer, hard cst | |||
| N084 | 6 | $ 277.20 | p-type Si:B | [100] | 2" | 775 ±10 | P/P | 1--35 | SEMI Prime, 1Flat, TTV<5µm, LaserMark, Thickness, TTV, Bow data recorded for each wafer, hard cst | |||
| U206 | 1 | $ 45.00 | p-type Si:B | [100] | 2" | 3,150 ±50 | C/C | >0.5 | 1Flat, Individual cst, Can be sold individually | |||
| 11261 | 16 | $ 19.44 | p-type Si:B | [100] | 2" | 279 | P/P | 0.08-0.12 | SEMI Prime, 1Flat, hard cst | |||
| H995 | 3 | $ 39.60 | p-type Si:B | [100] | 2" | 300 | P/E | 0.016-0.017 | SEMI Prime, NO Flats, hard cst | |||
| A1943 | 17 | $ 87.84 | p-type Si:B | [100] | 2" | 280 | P/P | 0.01-0.02 | SEMI Prime, 2Flats, TTV<1µm, hard cst | |||
| A1166 | 6 | $ 122.40 | p-type Si:B | [100] | 2" | 280 | NP/PN | 0.001-1.000 | SEMI Prime, 2Flats, Both-sides-polished, LPCVD Si3N4 200±10nm on both sides, hard cst | |||
| B0394 | 5 | $ 585.00 | p-type Si:B | [100] | 44×44mm | 500 | P/P | 0.001-0.005 | Silicon Frames: 44mm square with 40mm square removed from center (drawing available on request) | |||
| A0373 | 10 | $ 540.00 | p-type Si:B | [511] ±0.5° | 48.25 | 1,000 | P/E | >10 | Prime, NO Flats, hard cst | |||
| B039 | 5 | $ 36.00 | p-type Si:B | [111] ±0.5° | 2" | 500 ±15 | P/E | 1--35 | SEMI Prime, 1Flat, hard cst | |||
| 11570 | 9 | $ 47.34 | p-type Si:B | [111] ±0.5° | 2" | 600 | P/E | 0.01-0.05 | SEMI Prime, 1Flat, hard cst | |||
| 6031 | 14 | $ 35.64 | n-type Si:P | [110] | 2" | 280 | P/E | 19-33 | SEMI Prime, 1 Flat at <1,-1,0>, hard cst | |||
| P763 | 3 | $ 86.40 | n-type Si:Sb | [110] ±1.0° | 2" | 375 | P/E | 0.005-0.020 | SEMI Prime, 1Flat at <1,-1,0>, hard cst | |||
| B2305 | 1 | $ 122.40 | n-type Si:P | [100] | 2" | 5,000 | P/E | 10--35 | SEMI TEST (scratched), 2Flats, Individual cst | |||
| 11425 | 6 | $ 536.40 | n-type Si:P | [100] | 2" | 190 ±10 | P/E | 1--10 | SEMI Prime, 1Flat, TTV<4µm, hard cst | |||
| G629 | 15 | $ 10.80 | n-type Si:P | [100] | 2" | 350 | P/P | 1--50 | SEMI TEST (Scratched, unsealed cst - can be re-polished), NO Flats, hard cst | |||
| A1992 | 5 | $ 726.48 | n-type Si:P | [100] | 2" | 6,000 | P/E | 1-100 | Prime, NO Flats, Individual cst, Pack of 5 wafers | |||
| A2468 | 6 | $ 156.24 | n-type Si:P | [100] | 2" | 4,950 | P/P | 0.05-0.50 | SEMI Prime, 2Flats, Individual cst, Group of 6 wafers | |||
| A2268 | 2 | $ 105.84 | n-type Si:P | [100] | 2" | 5,000 | P/P | 0.05-0.50 | Front side prime, back-side scratched, 2Flats, single wafer cassettes, Group of 2 wafers | |||
| 12442 | 3 | $ 216.00 | n-type Si:P | [100] | 2" | 5,000 | P/E | |||||
| A2476 | 2 | $ 176.40 | n-type Si:P | [111] ±0.5° | 2" | 4,950 ±50 | P/P | >20 | Prime, NO Flats, Individual cst | |||
| C2196 | 3 | $ 93.60 | n-type Si:P | [111] ±0.5° | 2" | 5,000 ±50 | P/P | >20 | With Edge-Chips, NO Flats, Individual cst, Group of 3 wafers | |||
| 12448 | 16 | $ 176.40 | n-type Si:P | [111] ±0.5° | 2" | 5,000 ±50 | P/E | >20 | Prime, NO Flats, Individual cst | |||
| B1944 | 12 | $ 92.88 | n-type Si:P | [111] ±0.5° | 2" | 10,000 ±10 | E/E | >20 {35-75} | SEMI, NO Flats, Packed in a jar | |||
| 2995 | 3 | $ 84.24 | n-type Si:P | [111-3°] ±0.5° | 2" | 600 | P/E | ~10 | SEMI Prime, 1Flat, TTV<3µm, Bow/Warp<3µm, hard cst | |||
| S5855 | 8 | $ 41.04 | n-type Si:P | [111] ±0.5° | 2" | 500 | P/P | 2.8-10.0 | SEMI Prime, 2Flats, hard cst | |||
| F384 | 4 | $ 68.40 | n-type Si:P | [111] | 2" | 275 | P/P | 2.5-3.5 | SEMI Prime, 2Flats, SF 180° from PF (not 45° CW from PF), hard cst | |||
| N763 | 8 | $ 36.00 | n-type Si:P | [111] | 2" | 500 | P/E | 2.2-3.8 | SEMI Prime, 2Flats, hard cst | |||
| G136 | 1 | $ 210.24 | n-type Si:P | [111] | 2" | 275 | P/P | 1.48-1.70 | SEMI Prime, 1Flat, hard cst | |||
| G031 | 4 | $ 36.00 | n-type Si:P | [111] | 2" | 500 | P/E | 1--10 | SEMI Prime, 2Flats, hard cst | |||
| 4878 | 1 | $ 158.76 | n-type Si:P | [111] ±0.5° | 2" | 6,000 | P/E | 1--10 | SEMI Prime, 1Flat, Individual cst | |||
| Q962 | 8 | $ 43.20 | n-type Si:Sb | [111-3.5°] ±0.5° | 2" | 300 | P/E | 0.05-0.09 | SEMI Prime, 2Flats, hard cst | |||
| 11064 | 15 | $ 23.04 | n-type Si:As | [111] ±0.5° | 2" | 280 | P/E | 0.001-0.005 | SEMI Prime, 1Flat, hard cst | |||
| 10990 | 5 | $ 123.84 | n-type Si:As | [111] ±0.5° | 2" | 5,000 ±50 | P/E | 0.001-0.005 | SEMI TEST, NO Flats, coin roll | |||
1" Wafers |
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Note: Surface - P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface); Material - CZ unless noted
|
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| Item# | Qty | Qty in | Price | Material | Orient. | Diam. | Thck | Source | Resistivity | Comment | ||
| Stock | $/wafer | (µm) | Ωcm | |||||||||
| D975 | 8 | $ 46.80 | n-type Si:P | [100] | 1" | 475 ±10 | E/E | FZ >500 {1,900-2,400} | NO Flats, Soft cst | |||
| 5427 | 8 | $ 43.20 | Intrinsic Si:- | [111] ±0.5° | 1" | 500 | P/P | FZ >15,000 | SEMI Prime, 1Flat, hard cst | |||
| 8215 | 1 | $ 356.40 | p-type Si:B | [100-9° towards[001]] | 32 mm | 2,000 ±50 | P/E | >10 | Zero X-Ray Diffraction plate, with central sample pocket 5mmØ×200µm, NO Flats, Individual cst | |||
| 10511 | 10 | $ 162.00 | p-type Si:B | [100] | 1" | 100 ±15 | P/P | 1--10 | Prime, NO Flats, Individual cassettes, In Packs of 10, 10, 10, 10, 4 wafers | |||
| 11563 | 10 | $ 21.60 | p-type Si:B | [100] | 24mm | 300 | P/E | 1-100 | Prime, NO Flats, hard cst | |||
| 10055 | 13 | $ 28.80 | p-type Si:B | [100] | 1" | 525 ±10 | P/E | 1--35 | Prime, NO Flats, TTV<5µm, hard cst | |||
| 10220 | 8 | $ 28.80 | p-type Si:B | [100] | 1" | 525 ±10 | P/E | 1--35 | Prime, NO Flats, TTV<5µm, hard cst | |||
| A0385 | 3 | $ 54.00 | p-type Si:B | [100] | 1" | 525 ±10 | P/E | 1--35 | Prime, NO Flats, TTV<5µm, hard cst | |||
| 6879 | 9 | $ 30.24 | p-type Si:B | [100] | 1" | 275 | P/E | 0.0022-0.0025 | Prime, NO Flats, hard cst | |||
| 12175 | 13 | $ 21.24 | p-type Si:B | [100] | 1" | 525 | P/E | 0.001-0.005 | Prime, NO Flats, TTV<5µm, hard cst | |||
| B2299 | 10 | $ 21.24 | p-type Si:B | [100] | 1" | 525 | P/E | 0.001-0.005 | Prime, NO Flats, TTV<5µm, hard cst | |||
| 6179 | 1 | $ 86.40 | n-type Si:P | [100] | 1" | 1,500 | P/E | 1--20 | Prime, NO Flats, Individual cst | |||
| A2022 | 14 | $ 48.60 | n-type Si:P | [100] | 1" | 1,500 | P/E | 1-20 {1.5-8.4} | Prime, NO Flats, hard cst | |||
| 6595 | 8 | $ 39.60 | n-type Si:P | [100] | 1" | 525 | P/E | 0.05-0.15 | SEMI Prime, 1Flat, Soft cst | |||
| 11038 | 5 | $ 90.00 | n-type Si:As | [100] | 1" | 300 | P/P | 0.001-0.005 | Prime, NO Flats, hard cst | |||
| <1" Wafers | ||||||||||||
| Note: Surface – P = Polished, E = Etched, C = AsCut, G = Ground, Ox = Oxide (on that surface); Material – CZ unless noted | ||||||||||||
| Item | Qty | $/Wafer | Material | Orient. | Diam. | Thck | Surf. | Resistivity | Comment | |||
| (µm) | Ω·cm | |||||||||||
| 6446 | 1 | $270.00 | Intrinsic Si | [100] | 0.5" | 12,700 ±50 | C/C | FZ >10,000 | NO Flats, set of 4 rods sealed in polyethylene foil | |||
| 4427 | 8 | $324.00 | Intrinsic Si | [111] ±2° | 0.39" | 27,870 ±100 | C/C | FZ >10,000 | Single crystal Si rod, 9.9mm Ø × 27.9mm, NO Flats | |||
| 12050 | 6 | $203.76 | n-type Si:P | [100] | 10.0 ±0.2 mm | 1,500 ±50 | P/G | Prime, NO Flats, polished side Ra <3Å rms, hard cassette | ||||
| A2050 | 6 | $230.40 | n-type Si:P | [100] | 20.0 × 15.0 mm | 5,000 ±200 | P/E | Silicon cubes, one-side SEMI Prime polished, Ra <3Å rms | ||||